N-type semiconductor materials in thin film transistors and electronic devices

A process for fabricating a thin film semiconductor device, comprising, not necessarily in the following order, the steps of:

• (a) depositing, onto a substrate, a thin film of n-channel organic semiconductor material that comprises an N,N″-l,4,5,8-naphthalenetetracarboxylic acid diimide having at least one cycloalkyl group that has a fluorinated substituent containing at least one fluorine at its 4-position, such that the organic semiconductor material exhibits a field effect electron mobility that is greater than 0.001 cm2 /Vs
• (b) forming a spaced apart source electrode and drain electrode,
• wherein the source electrode and the drain electrode are separated by, and electrically connected with, the n-channel semiconductor film, and.
• (c) forming a gate electrode spaced apart from the organic semiconductor material,
• wherein said N,N″,1,4,5,8-naphthalenetetracarboxylic acid diimide is represented by the following Structure I:
• wherein Rc resents a fluorinated substituent in the C-4 cis configuration with respect to the imide group, and Rt represents a fluorinated substituent in the C-4 trans configuration with respect to the imide group, and one of Rc and Rt can be hydrogen. A1 is a substituted or unsubstituted cycloalkyl group, and m is 0.