Sidewall structured switchable resistor cell
AssigneeSanDisk 3D LLC
InventorRoy E. Scheuerlein
Life of this patent
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Abstract
A method of making a memory device includes forming a first conductive electrode, forming an insulating structure over the first conductive electrode, forming a resistivity switching element on a sidewall of the insulating structure, forming a second conductive electrode over the resistivity switching element, and forming a steering element in series with the resistivity switching element between the first conductive electrode and the second conductive electrode, wherein a height of the resistivity switching element in a first direction from the first conductive electrode to the second conductive electrode is greater than a thickness of the resistivity switching element in second direction perpendicular to the first direction.
Claims25
A method of making a memory device, comprising:
- forming a first conductive electrode;
- forming an insulating structure over the first conductive electrode;
- forming a resistivity switching element on a sidewall of the insulating structure;
- forming a second conductive electrode over the resistivity switching element;
- and
- forming a steering element in series with the resistivity switching element between the first conductive electrode and the second conductive electrode;
- wherein a height of the resistivity switching element in a first direction from the first conductive electrode to the second conductive electrode is greater than a thickness of the resistivity switching element in a second direction perpendicular to the first direction.
A memory device, comprising:
- a first conductive electrode;
- an insulating structure;
- a resistivity switching element located on a sidewall of the insulating structure;
- a second conductive electrode located over the resistivity switching element;
- and
- a steering element located in series with the resistivity switching element between the first conductive electrode and the second conductive electrode;
- wherein a height of the resistivity switching element in a first direction from the first conductive electrode to the second conductive electrode is greater than a thickness of the resistivity switching element in second direction perpendicular to the first direction.
A method of making a memory device, comprising
- forming a first conductive electrode;
- forming at least one diode layer over the first conductive electrode;
- forming at least one insulating template layer over the diode layer;
- forming a hard mask pattern over the template layer;
- etching the template layer using the hard mask pattern as a mask;
- reducing a width of the template layer to form an insulating pillar;
- depositing a metal oxide resistivity switching layer over a sidewall of the insulating pillar;
- etching the diode layer using the hard mask pattern as a mask to form a pillar diode steering element;
- and
- forming a second conductive electrode in contact with the metal oxide resistivity switching layer.
Dependencies are inferred from the claim text.