Method for fabricating semiconductor device and substrate processing apparatus
AssigneeHitachi Kokusai Electric Inc.
InventorsYasuhiro Inokuchi, Atsushi Moriya
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Abstract
Provided is a method and a substrate processing apparatus for fabricating a semiconductor device by forming a film at a relatively high rate without etching an N+ substrate. In the method, a silicon substrate is loaded into a processing chamber in a first step. In a second step, at least a first silane-based gas and a first etching gas is supplied to the processing chamber while heating the semiconductor substrate. In a third step, at least a second silane-based gas and a second etching gas is supplied to the processing chamber while heating the semiconductor substrate.
Claims28
A method for fabricating a semiconductor device, the method comprising:
- a first step of loading a substrate into a processing chamber;
- a second step of supplying at least a first silane-based gas and a first etching gas to the processing chamber while heating the substrate;
- and
- a third step of supplying at least a second silane-based gas and a second etching gas to the processing chamber while heating the substrate.
A method for fabricating a semiconductor device, the method comprising:
- a first step of loading a substrate into a processing chamber;
- a second step of supplying at least a first silane-based gas and a first etching gas to the processing chamber while heating the substrate;
- a third step of supplying at least a second silane-based gas to the processing chamber while heating the substrate;
- and
- a fourth step of supplying at least a second etching gas to the processing chamber while heating the substrate,
- wherein the third and fourth steps are repeated a plurality of times.
A substrate processing apparatus comprising:
- a processing chamber configured to accommodate a substrate;
- a heater configured to heat the substrate;
- a plurality of gas supply units configured to supply silane-based gas and etching gas to the processing chamber;
- an exhaust unit configured to exhaust the processing chamber;
- and
- a controller configured to control the processing chamber, the heater, the gas supply units, and the exhaust unit,
- wherein the controller controls a first gas supply unit to supply a first silane-based gas and a first etching gas in a first step, and the controller controls a second gas supply unit to supply a second silane-based gas and a second etching gas in a second step.
Dependencies are inferred from the claim text.