Silicon Wafer Having Through-Wafer Vias With A Predetermined Geometric Shape

A method of manufacturing a semiconductor having a conductive via comprising:

• providing a semiconductor substrate having first and second main surfaces opposite to each other;
• forming in the semiconductor substrate at least one trench of a substantially rectangular shape in the first main surface, the at least one trench extending to a first depth position D in the semiconductor substrate;
• lining the at least one trench with a dielectric material;
• filling the at least one trench with a conductive material;
• and
• planarizing the second main surface to expose the conductive material surrounding the at least one trench, the at least one trench forming the conductive via.

A method of manufacturing a semiconductor device comprising:

• providing a semiconductor substrate having first and second main surfaces opposite to each other;
• forming in the semiconductor substrate at least one trench of a predetermined geometric shape in the first main surface, the at least one trench extending to a first depth position D in the semiconductor substrate;
• lining the at least one trench with a dielectric material;
• and
• filling the at least one trench with a conductive material.