Method for manufacturing iron silicide nano-wires
AssigneesTsinghua University, Hon Hai Precision Industry Co., Ltd.
InventorsHai-Lin Sun, Kai-Li Jiang, Qun-Qing Li, Shou-Shan Fan
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Abstract
A method for making iron silicide nano-wires comprises the following steps. Firstly, providing a growing substrate and a growing device, the growing device comprising a heating apparatus and a reacting room. Secondly, placing the growing substrate and a quantity of iron powder into the reacting room. Thirdly, introducing a silicon-containing gas into the reacting room. Finally, heating the reacting room to a temperature of 600-1200° C.
Claims20
A method for making iron silicide nano-wires, the method comprising the following steps of:
- (a) providing a growing substrate and a growing device, and the growing device comprising a heating apparatus and a reacting room;
- (b) placing the growing substrate and a quantity of iron material into the reacting room;
- (c) introducing a silicon-containing gas into the reacting room;
- and
- (d) heating the reacting room to a temperature of 600˜1200° C.
A method for making iron silicide nano-wires, the method comprising the following steps of:
- providing a growing substrate and a growing device, and the growing device comprising a heating apparatus and a reacting room;
- placing the growing substrate with a quantity of iron material into the reacting room;
- introducing a hydrogen gas and a silicon-containing gas into the reacting room;
- and
- heating the reacting room to a temperature of 600˜800° C.
Dependencies are inferred from the claim text.