Nonvolatile Memory Devices Having Gate Structures Doped by Nitrogen and Methods of Fabricating the Same
AssigneeSamsung Electronics Co., Ltd.
InventorsChang-Hyun Lee, Dong-Gun Park
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Abstract
Nonvolatile memory devices are provided including an integrated circuit substrate and a charge storage pattern on the integrated circuit substrate. The charge storage pattern has a sidewall and a tunnel insulating layer is provided between the charge storage pattern and the integrated circuit substrate. A gate pattern is provided on the charge storage pattern. A blocking insulating layer is provided between the charge storage pattern and the gate pattern. The sidewall of the charge storage pattern includes a first nitrogen doped layer. Related methods of fabricating nonvolatile memory devices are also provided herein.
Claims17
1-15. (canceled)
A method of forming a nonvolatile memory device comprising:
- forming a tunnel insulating layer on an integrated circuit substrate;
- forming a charge storage layer on the tunnel insulating layer;
- forming a blocking insulating layer on the charge storage layer;
- forming a gate electrode on the blocking insulating layer;
- forming a blocking insulating pattern and a charge storage pattern aligned to the gate electrode, to form a stack gate structure including the blocking insulating pattern, the charge storage pattern and the gate electrode;
- and
- forming a first nitrogen doped layer by nitriding sidewalls of the stack gate structure.
A method of forming a nonvolatile memory device comprising:
- forming a trench device isolation region on an integrated circuit substrate, the trench device isolation region defining an active region;
- and
- forming a gate electrode crossing over the active region, wherein forming the trench device isolation region comprising forming a nitrogen doped layer in an upper portion of a trench sidewall in the trench isolation region.
A method of forming a nonvolatile memory device comprising:
- forming a tunnel insulating layer on the integrated circuit substrate;
- forming a first nitrogen doped layer on an upper surface of the tunnel insulating layer;
- forming a charge storage layer on the tunnel insulating layer and contacting the first nitrogen doped layer;
- forming a blocking insulating layer on the charge storage layer;
- and
- forming a gate electrode on the blocking insulating layer.
A method of forming a nonvolatile memory device comprising:
- forming a tunnel insulating layer on an integrated circuit substrate;
- forming a charge storage layer on the tunnel insulating layer;
- forming a blocking insulating layer on the charge storage layer;
- and
- forming a gate electrode on the blocking insulating layer, wherein forming the charge storage layer comprises forming a dot layer including a conducting material of a dot shape or a insulating material of a dot shape, a charge trap layer, a combination of the dot layer and the charge trap layer, or a floating gate pattern, and wherein the method further comprises:
- forming a first nitrogen doped layer on an upper surface of at least one of the layers or the floating gate pattern.
A method of forming a nonvolatile memory device comprising:
- forming a tunnel insulating layer on an integrated circuit substrate;
- forming a charge storage layer on the tunnel insulating layer;
- forming a blocking insulating layer on the charge storage layer;
- and
- forming a gate electrode on the blocking insulating layer, wherein forming the blocking insulating layer comprises forming at least one insulating layer including silicon oxide, silicon nitride, Al2O3, hafnium aluminate, hafnium silicate, HfO2, HfAlO, HfAlON, HfSiO and/or HfSiON and wherein the method further comprises forming a second nitrogen doped layer on an upper surface of one or more of the at least one insulating layer.
Dependencies are inferred from the claim text.