Method for manufacturing a semiconductor device

Abstract

Disclosed herein is a method for manufacturing a semiconductor device that includes: etching a semiconductor substrate to form a recess region; forming a device isolation trench in a portion of the etched semiconductor substrate including a portion of the recess region; and forming a device isolation film in the device isolation trench. The recess region is formed before the device isolation film, which can prevent a gate subsequently formed over the device isolation film from leaning. As a result, a subsequent landing plug contact hole is opened, which can improve process defects.

Dependencies are inferred from the claim text.