Method of forming multiple fins for a semiconductor device

A method of manufacturing a semiconductor device, the method comprising:

• providing a semiconductor wafer having a layer of conductive material;
• forming a whole-field arrangement of fins from the layer of conductive material, the whole-field arrangement of fins comprising a plurality of conductive fins having a uniform pitch and a uniform fin thickness;
• forming a cut mask over the whole-field arrangement of fins, the cut mask selectively masking sections of the whole-field arrangement of fins with a layout that defines features for a plurality of transistor devices;
• and
• removing a portion of the whole-field arrangement of fins, the portion being unprotected by the cut mask.

A method of manufacturing a semiconductor device, the method comprising:

• forming a whole-field arrangement of fins on a semiconductor wafer, the whole-field arrangement of fins comprising a plurality of conductive fins;
• forming an arrangement of gate lines on the semiconductor wafer;
• forming a cut mask that selectively masks sections of the whole-field arrangement of fins, and selectively masks sections of the arrangement of gate lines, the cut mask having a layout that defines features for a plurality of transistor devices;
• and
• removing a portion of the whole-field arrangement of fins and a portion of the arrangement of gate lines, the portions being unprotected by the cut mask.