Scalable Power Field Effect Transistor with Improved Heavy Body Structure and Method of Manufacture
AssigneeFairchild Semiconductor Corporation
InventorsQi Wang, Ming-Huang Huang, Joelle Sharp
Life of this patent
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Abstract
A method for forming a field effect transistor (FET) includes the following steps. A well region of a first conductivity type is formed in a semiconductor region of a second conductivity type. A gate electrode is formed adjacent to but insulated from the well region. A source region of the second conductivity type is formed in the well region. A heavy body recess is formed extending into and terminating within the well region adjacent the source region. The heavy body recess is at least partially filled with a heavy body material having a lower energy gap than the well region.
Claims35
A method of forming a field effect transistor (FET), comprising:
- forming a well region of a first conductivity type in a semiconductor region of a second conductivity type;
- forming a gate electrode adjacent to but insulated from the well region;
- forming a source region of the second conductivity type in the well region;
- forming a heavy body recess extending into and terminating within the well region adjacent the source region;
- and
- at least partially filling the heavy body recess with a heavy body material comprising germanium and having a lower energy gap than the well region.
A method of forming a field effect transistor (FET), comprising:
- forming a well region of a first conductivity type is a semiconductor region of a second conductivity type;
- forming a gate electrode adjacent to but insulated from the well region;
- forming a source region of the second conductivity type in the well region;
- forming a heavy body recess extending into and terminating within the well region adjacent the source region;
- and
- forming a heavy body region extending in the well region along a bottom of the heavy body recess, wherein the heavy body region comprises germanium and has a lower energy gap than that of the well region.
Dependencies are inferred from the claim text.