Electrostatic chuck and method for manufacturing the same
AssigneeNGK Insulators, Ltd.
InventorsKazuhiro NOBORI, Yutaka MORI, Keiichi NAKAMURA
Life of this patent
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Abstract
The electrostatic chuck includes a base including an aluminum nitride-containing member; a dielectric layer formed on the base including a member having a volume resistivity of at least 1×1015 Ω·cm at a temperature range of about 25° C. to about 300° C. and including 2 to 5% by mass of yttrium oxide, 2 to 5% by mass of ytterbium oxide, and a balance of aluminum nitride based on the total mass of the dielectric layer; and an electrode embedded under the dielectric layer so as to be positioned between the dielectric layer and the base, configured to generate an electrostatic absorption force.
Claims5
An electrostatic chuck, comprising:
- a base including an aluminum nitride-containing member;
- a dielectric layer formed on the base including a member having a volume resistivity of at least 1×1015 Ω·cm at a temperature range of about 25° C. to about 300° C. and including 2 to 5% by mass of yttrium oxide, 2 to 5% by mass of ytterbium oxide, and a balance of aluminum nitride based on the total mass of the dielectric layer;
- and
- an electrode embedded under the dielectric layer so as to be positioned between the dielectric layer and the base, configured to generate an electrostatic absorption force.
An electrostatic chuck, comprising:
- a base;
- a dielectric layer formed on the base;
- and
- an electrode embedded under the dielectric layer so as to be positioned between the dielectric layer and the base, configured to generate an electrostatic absorption force, wherein
- the base and the dielectric layer each include a member having a volume resistivity of at least 1×1015 Ω·cm at a temperature range of about 25° C. to about 300° C. and including 2 to 5% by mass of yttrium oxide, 2 to 5% by mass of ytterbium oxide, and a balance of aluminum nitride based on the total mass of the base or the dielectric layer.
A method for manufacturing an electrostatic chuck, comprising:
- forming a base including an aluminum nitride member;
- forming, on the base, an electrode to generate an electrostatic adsorption force, so as to expose periphery of the base;
- and
- forming a dielectric layer, on the base so as to embed the electrode, the dielectric layer includes a member having a volume resistivity of at least 1×1015 Ω·cm at a temperature range of about 25° C. to about 300° C. and including 2 to 5% by mass of yttrium oxide, 2 to 5% by mass of ytterbium oxide, and a balance of aluminum nitride based on the total mass of the dielectric layer.
Dependencies are inferred from the claim text.