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US 2009/0243117 A1Published application
Contact structure, a semiconductor device employing the same, and methods of manufacturing the same
AssigneeSamsung Electronics Co., Ltd.
InventorsJeong-Hee Park, Yong-Ho Ha, Hyeong-Geun An, Joon-Sang Park, Hyun-Suk Kwon, Myung-Jin Kang, Doo-Hwan Park
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Abstract
A contact structure that includes a first pattern formed on a substrate, wherein the first pattern has a recessed region in an upper surface thereof, a planarized buffer pattern formed on the first pattern, and a conductive pattern formed on the planarized buffer pattern.
Claims14
A contact structure, comprising:
- a first pattern formed on a substrate, wherein the first pattern has a recessed region in an upper surface thereof;
- a planarized buffer pattern formed on the first pattern;
- and
- a conductive pattern formed on the planarized buffer pattern.
1 more element
A semiconductor device, comprising:
- a data storage pattern formed on a substrate, wherein the data storage pattern has a recessed region in an upper surface thereof;
- a planarized buffer pattern formed on the data storage pattern;
- and
- a conductive pattern formed on the planarized buffer pattern.
1 more element
14-21. (canceled)
Dependencies are inferred from the claim text.