# US 2009/0243113 A1 · Semiconductor structure > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2009/0243113 A1 - Document ID: US20090243113A1 - Status: Published application - Kind: A1 - Application number: 12/080,126 - Filed: 2008-03-31 - Published: 2009-10-01 - Earliest claimed: 2008-03-31 - Assignees: Andigilog, Inc. - Inventors: Derrick Tuten; David L. Cave - Web page: https://patentgrep.com/patent/US20090243113A1 ## CPC - H10W 20/493: {Fuses, i.e. interconnections changeable from conductive to non-conductive} - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract A fusible link between metallization layers of a semiconductor device comprises a tungsten plug deposited in a via interconnecting two aluminum metallization layers. ## Claims ### Claim 1 A semiconductor device, comprising: a silicon substrate; a plurality of metal conductor paths separated by silicon dioxide, wherein each of the metal conductor paths is in a different plane; and a tungsten link disposed through the silicon dioxide and providing an electrical connection between the plurality of metal conductor paths, wherein in response to predetermined maximum current levels being applied for a predetermined time, the tungsten link is configured to permanently open the electrical connection. ### Claim 2 (depends on 1) The semiconductor device of claim 1, wherein each of the plurality of metal conductor paths comprises aluminum. ### Claim 3 A semiconductor device, comprising: a plurality of metallization layers; one or more silicon dioxide layers separating the plurality of metallization layers; and a tungsten link extending through one or more vias in the one or more silicon dioxide layers to connect at least two metallization layers of the plurality of metallization layers, wherein the tungsten link is configured to function as a programmable fuse link between the at least two metallization layers such that application of a predetermined current for a predetermined time to the at least two metallization layers results in the tungsten link permanently opening up. ### Claim 4 (depends on 3) The semiconductor device of claim 3, wherein each of the plurality of metallization layers comprises aluminum. ### Claim 5 A method for providing fUsible links in a semiconductor device, the method comprising: depositing a first metallization layer on the device; depositing one or more insulating layers on the first metallization layer; providing a via in the one or more insulating layers; depositing a tungsten plug in the via; and depositing a second metallization layer on the one or more insulating layers, such that the tungsten plug is in contact with both the first and second metallization layers; wherein the tungsten plug is configured to be responsive to a predetermined current being applied across the tungsten plug for a predetermined time by causing-an electrical connection provided by the tungsten plug to permanently open. ### Claim 6 (depends on 5) The method of claim 5, wherein the first and second metallization layers comprise aluminum. ### Claim 7 (depends on 6) The method of claim 6, wherein the one or more insulating layers comprise silicon dioxide. ### Claim 8 A method of programming a semiconductor device, the method comprising electrically connecting two metallization layers of a semiconductor device with a tungsten plug, wherein the tungsten plug is configured to respond to a predetermined maximum current being applied across the tungsten plug for a predetermined time by causing an electrical connection provided by the plug to open. ### Claim 9 (depends on 8) The method of claim 8, further comprising applying the predetermined maximum current across the tungsten plug to cause the electrical connection provided by the plug to open. ### Claim 10 (depends on 8) The method of claim 8, wherein said electrically connecting comprises deposing the tungsten plug in a via formed though one or more insulating layers that separate the two metallization layers. ### Claim 11 (depends on 8) The method of claim 8, wherein opening the electrical connection provided by the plug permanently programs the semiconductor device. ### Claim 12 (depends on 8) The method of claim 8, wherein the two metallization layers comprise aluminum. ### Claim 13 (depends on 9) The method of claim 9, wherein said applying the predetermined maximum current across the tungsten plug comprises applying current from one of the two metallization paths to the other of the two metallization paths. ### Claim 14 A semiconductor device, comprising means for electrically connecting two metallization layers of a semiconductor device, wherein the electrically connecting means is configured to respond to a predetermined maximum current being applied across the electrically connecting means for a predetermined time by causing an electrical connection provided by the electrically connecting means to open. ### Claim 15 (depends on 14) The semiconductor device of claim 14, wherein the electrically connecting means comprises a tungsten link. ### Claim 16 A semiconductor structure, comprising: a first metallization layer; a second metallization layer; one or more insulating layers disposed between the first and second metallization layer; and a tungsten link electrically connecting the first and second metallization layers, wherein the tungsten link is configured to respond to a predetermined maximum current being applied across the tungsten link for a predetermined time by causing the electrical connection provided by the tungsten link to open. ### Claim 17 (depends on 16) The semiconductor structure of claim 16, wherein the first and second metallization layers comprise aluminum. ### Claim 18 (depends on 16) The semiconductor structure of claim 16, wherein the one or more insulating layers comprise silicon dioxide. ### Claim 19 (depends on 1) The device of claim 1, wherein the tungsten link is disposed within a via between the plurality of metal conductor paths. ### Claim 20 (depends on 19) The device of claim 19, wherein the tungsten link comprises a plug within the via. ### Claim 21 (depends on 1) The device of claim 1, wherein the silicon dioxide is disposed as one or more separation layers separating the plurality of metal conductor paths, wherein each of the one or more separation layers is in a different plane, and wherein the tungsten link is disposed through at least one of the one or more separation layers. ### Claim 22 (depends on 21) The device of claim 21, wherein the electrical connection between the plurality of metal conductor paths comprises a physical contact between the tungsten link and the plurality of metal conductor paths. ### Claim 23 (depends on 22) The device of claim 22, wherein the electrical connection, when open, severs the physical contact between the tungsten link and the plurality of metal conductor paths. ### Claim 24 (depends on 22) The device of claim 22, wherein the electrical connection, when open, severs the tungsten link. ### Claim 25 (depends on 1) The device of claim 1, wherein the predetermined maximum current levels are less than or equal to 700 milliamps. ### Claim 26 (depends on 1) The device of claim 1, wherein the predetermined maximum current levels are applied for less than 100 microseconds. ### Claim 27 (depends on 1) The device of claim 1, wherein application of the predetermined maximum current levels for a predetermined time comprises applying a current which varies in magnitude over time. ### Claim 28 (depends on 27) The device of claim 27, wherein the current decreases over time. ### Claim 29 (depends on 27) The device of claim 27, wherein the current has a high initial magnitude and decreases to a low magnitude. ### Claim 30 (depends on 29) The device of claim 29, wherein the initial high magnitude is maintained for a relatively short period of time. ### Claim 31 (depends on 29) The device of claim 29, wherein the low magnitude is maintained for a relatively long period of time.