Novel approach to high temperature wafer processing
AssigneeHoneywell International Inc.
InventorRichard A. Davis
Life of this patent
Estimating the term…
Abstract
At temperatures near, and above, 385° C., gold can diffuse into silicon and into some contact materials. Gold, however, is an excellent material because it is corrosion resistant, electrically conductive, and highly reliable. Using an adhesion layer and removing gold from the contact area above and around a contact allows a Micro-Electro-Mechanical Systems device or semiconductor to be subjected to temperatures above 385° C. without risking gold diffusion. Removing the risk of gold diffusion allows further elevated temperature processing. Bonding a device substrate to a carrier substrate can be an elevated temperature process.
Claims19
A system comprising:
- a device substrate on which at least one device and at least one contact has been created via semiconductor processing wherein the at least one contact comprises a contact material;
- an adhesion layer deposited over the contact and the contact area wherein the contact area is an area around the contact;
- and
- a gold layer that overlays the adhesion layer in most areas but does not overlay the adhesion layer in the contact area such that exposure to temperatures between 375° C. and 550° C. does not result in gold contamination of the contact.
A system comprising:
- a device substrate on which at least one device and at least one contact has been created via semiconductor processing wherein the at least one contact comprises a contact material;
- an adhesion layer deposited over the contact and the contact area wherein the contact area is an area around the contact;
- a gold layer that overlays the adhesion layer in most areas but does not overlay the adhesion layer in the contact area such that exposure to temperatures between 375° C. and 550° C. does not result in gold contamination of the contact;
- a handler substrate;
- and
- a bond that adheres the handler substrate to the device substrate.
A system comprising:
- a device substrate on which at least one device and at least one contact has been created via semiconductor processing wherein the at least one contact comprises a contact material;
- an adhesion layer deposited over the contact and the contact area wherein the contact area is an area around the contact;
- a gold layer that overlays the adhesion layer in most areas but does not overlay the adhesion layer in the contact area such that exposure to temperatures between 375° C. and 550° C. does not result in gold contamination of the contact;
- a handler substrate wherein the handler substrate is glass or silicon;
- and
- a bond that adheres the handler substrate to the device substrate.
Dependencies are inferred from the claim text.