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US 2009/0243106 A1Published application
Structures and methods to enhance copper metallization
OwnerPaul A. Farrarinventor
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Abstract
Disclosed structures and methods inhibit atomic migration and related capacitive-resistive effects between a metallization layer and an insulator layer in a semiconductor structure. One exemplary structure includes an inhibiting layer between an insulator and a metallization layer. The insulator includes a polymer or an insulating oxide compound. And, the inhibiting layer has a compound formed from a reaction between the polymer or insulating oxide compound and a transition metal, a representative metal, or a metalloid.
Claims24
A semiconductor structure comprising:
- an insulator layer having a first substance, the first substance comprising a material selected from a group consisting of a polymer and a foamed polymer;
- an inhibiting layer on the insulator layer, wherein the inhibiting layer includes a second substance, the second substance selected from a group consisting of a transition metal and a representative metal, the inhibiting layer including a compound formed by the first substance and the second substance so as to inhibit undesired atomic migration;
- and
- a copper metallization layer on the inhibiting layer.
1 more element
A semiconductor structure comprising:
- an insulator layer having a first substance, the first substance comprising a material selected from a group consisting of a polymer, a foamed polymer, a fluorinated polymer, a fluorinated-foamed polymer, and an insulator oxide compound;
- an inhibiting layer on the insulator layer, the inhibiting layer including a second substance, the second substance selected from a group consisting of a transition metal, a representative metal, and a metalloid, the inhibiting layer including a compound formed from a reaction between the first substance and the second substance so as to inhibit undesired atomic migration;
- and
- a copper metallization layer on the inhibiting layer.
1 more element
A semiconductor structure comprising:
- an insulator layer having a first substance, the first substance comprising a material selected from a group consisting of a foamed polymer and a fluorinated polymer;
- an inhibiting layer on the insulator layer, the inhibiting layer including a second substance, the second substance selected from a group consisting of a representative metal and a metalloid, the inhibiting layer including a compound formed from a reaction between the first substance and the second substance so as to inhibit undesired atomic migration;
- and
- a copper metallization layer on the inhibiting layer.
1 more element
Dependencies are inferred from the claim text.