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US 2009/0243105 A1Published application
Wire bonding on reactive metal surfaces of a metallization of a semiconductor device by providing a protective layer
AssigneeGlobalfoundries Inc.
InventorsMatthias Lehr, Frank Kuechenmeister
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Abstract
In semiconductor devices having a copper-based metallization system, bond pads for wire bonding may be formed directly on copper surfaces, which may be covered by an appropriately designed protection layer to avoid unpredictable copper corrosion during the wire bond process. A thickness of the protection layer may be selected such that bonding through the layer may be accomplished, while also ensuring a desired high degree of integrity of the copper surface.
Claims25
A method, comprising:
- forming a dielectric layer stack above a metallization layer formed above a substrate of a semiconductor device, said metallization layer comprising a contact region having a copper-containing surface for receiving a bond wire;
- forming an opening in said dielectric layer stack to expose a portion of said copper-containing surface;
- forming a protection layer at least on said exposed portion of said copper-containing surface;
- and
- attaching a lead wire to said exposed portion of said copper-containing surface in the presence of said protection layer.
2 more elements
A method, comprising:
- forming a dielectric layer stack above a metallization layer formed above a substrate of a semiconductor device, said metallization layer comprising a metal region for connecting to a bond wire;
- forming a recess in said dielectric layer stack so as to define a bond area of said metal region, wherein at least a bottom layer of said dielectric layer stack within the recess covers said metal region;
- and
- bonding a lead wire to said metal region in the presence of said bottom layer.
1 more element
A semiconductor product, comprising:
- a substrate;
- a metallization system comprising a last metallization layer, said last metallization layer formed above said substrate;
- a dielectric layer stack formed above said last metallization layer;
- a bond pad formed in an opening of said dielectric layer stack, said bond pad comprising a copper-containing surface, a portion of said copper-containing surface being covered by a first material;
- a bond wire bonded to a portion of said copper-containing surface;
- and
- a second material enclosing said bond pad and said bond wire, said second material differing from said first material.
4 more elements
Dependencies are inferred from the claim text.