Method, structure and design structure for customizing history effects of soi circuits
AssigneeInternational Business Machines Corporation
InventorsBrent A. Anderson, Andres Bryant, Edward J. Nowak
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Abstract
A design structure is embodied in a machine readable medium for designing, manufacturing, or testing a design. The design structure includes a high-leakage dielectric formed over an active region of a FET and a low-leakage dielectric formed on the active region and adjacent the high-leakage dielectric. The low-leakage dielectric has a lower leakage than the high-leakage dielectric. Also provided is a structure and method of fabricating the structure.
Claims20
A structure comprising a high-leakage dielectric formed over an active region of a FET and a low-leakage dielectric formed on the active region and adjacent the high-leakage dielectric, wherein the low-leakage dielectric has a lower leakage than the high-leakage dielectric.
A method, comprising:
- forming a high-leakage dielectric on an active region of a device;
- forming a low-leakage dielectric on a portion of the active region of the device;
- and
- forming a gate electrode over the high-leakage dielectric and the low-leakage dielectric.
A design structure embodied in a machine readable medium for designing, manufacturing, or testing an integrated circuit, the design structure comprising a high-leakage dielectric formed over an active region of a FET and a low-leakage dielectric formed on the active region and adjacent the high-leakage dielectric, wherein the low-leakage dielectric has a lower leakage than the high-leakage dielectric.
Dependencies are inferred from the claim text.