Plasma processing apparatus and plasma processing method
AssigneeTokyo Electron Limited
InventorYusuke HIRAYAMA
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Abstract
A plasma processing apparatus includes a local plasma generator, provided to face a mounting table for mounting thereon a substrate to be processed in an airtight processing chamber, for allowing a plasma to locally react on the substrate to be processed; and a moving unit for moving the local plasma generator. The local plasma generator has an offset gas discharge mechanism for discharging an offset gas which offsets reaction of a plasma of a gas discharged from an inside of the local plasma generator.
Claims10
A plasma processing apparatus comprising:
- a local plasma generator, provided to face a mounting table for mounting thereon a substrate to be processed in an airtight processing chamber, for allowing a plasma to locally react on the substrate to be processed;
- and
- a moving unit for moving the local plasma generator, wherein the local plasma generator includes an offset gas discharge mechanism for discharging an offset gas which offsets reaction of a plasma of a gas discharged from an inside of the local plasma generator.
A plasma processing method for plasma processing an entire surface of a substrate to be processed by repeatedly performing a process for allowing a plasma of a gas to locally react on the substrate until the entire surface of the substrate is processed by the plasma with the use of a local plasma generator disposed to face a mounting table for mounting thereon the substrate to be processed in an airtight processing chamber, the method comprising:
- discharging an offset gas, which offsets reaction of the plasma, to a boundary region which surrounds a region through which the plasma is discharged from an inside of the local plasma generator into the processing chamber.
Dependencies are inferred from the claim text.