Plasma processing apparatus and plasma etching method

A plasma processing apparatus comprising:

• A vacuum evacuable processing chamber;
• a lower electrode for mounting a substrate thereon in the processing chamber;
• an inner upper electrode provided in the processing chamber to face the lower electrode;
• an outer upper electrode provided in a ring shape at a radially outside of the inner upper electrode in the processing chamber and electrically isolated from the inner upper electrode;
• a processing gas supply unit for supplying a processing gas into a processing space between the inner and the outer upper electrode and the lower electrode;
• a radio frequency (RF) power supply unit for applying an RF power to the lower electrode or the inner and the outer upper electrode to generate a plasma of the processing gas by RF discharge;
• a first DC power supply unit for applying a first variable DC voltage to the inner upper electrode;
• and
• a second DC power supply unit for applying a second variable DC voltage to the outer upper electrode.