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US 2009/0242514 A1Published application
Etch Process and Etching Chamber
AssigneePVA TePla AG
InventorJeff Alistair Hill
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AssigneePVA TePla AG
InventorJeff Alistair Hill
Estimating the term…
The invention relates to a process for etching a substrate (3) in an etching chamber (1) with a plasma ignited outside of the etching chamber (1). The process is characterized in that during the etching process at least temporarily at least one gas jet (10) is directed from the side to the radical stream (7) which is directed towards the substrate (3). Furthermore the invention relates to an etching chamber for etching of a substrate (3) with a substrate holder (2) and a plasma source (4) remote to the substrate holder (2), which is characterized in that between the substrate holder (2) and the plasma source (4) at least one nozzle (9) for lateral introduction of a gas jet (10) into the etching chamber (1) is provided. With this invention the distribution of the active species on the surface of a substrate can be easily influenced.
Process for etching a substrate in an etching chamber with a plasma ignited outside of the etching chamber, characterized in that during the etching process at least temporarily at least one gas jet is directed from the side to the radical stream which is directed towards the substrate in order to distribute the radical stream for the etching process over the surface of the substrate.
Etching chamber for etching of a substrate with a substrate holder and a plasma source remote to the substrate holder, characterized in that between the substrate holder and the plasma source at least one nozzle for lateral introduction of a gas jet into the etching chamber is provided.
Dependencies are inferred from the claim text.