Method of manufacturing a semiconductor device having a stacked capacitor
AssigneeElpida Memory, Inc.
InventorShinpei IIJIMA
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Abstract
A stacked capacitor in a memory cell has a bottom electrode made of a metal or metal compound, a capacitor insulation film and a top electrode made of a metal or a metal compound. The capacitor insulation film includes an aluminum oxide film having a thickness of 2 to 4 nm and in contact with the bottom electrode, and an overlying hafnium oxide film having a thickness of 3 to 6 nm. The stacked capacitor has a higher resistance against a biased temperature test.
Claims9
A method for manufacturing a stacked capacitor in a semiconductor device, said method consecutively comprising:
- forming a bottom electrode including a metal or a metal compound overlying a substrate;
- forming a capacitor insulation film including an aluminum oxide film on said bottom electrode, said aluminum oxide film having a thickness of 2 to 5 nm;
- and
- forming a top electrode including a metal or a metal compound on said capacitor insulation film.
A method for manufacturing a stacked capacitor in a semiconductor device, consecutively comprising:
- forming a bottom electrode including a metal or a metal compound overlying a substrate;
- forming a capacitor insulation film on said bottom electrode, said capacitor insulation film including a first aluminum oxide film, a hafnium oxide film and a second aluminum oxide film in this order as viewed from said bottom electrode;
- and
- forming a top electrode including a metal or a metal compound on said capacitor insulation film.
A method for manufacturing a stacked capacitor in a semiconductor device, said method consecutively comprising:
- forming a semiconductor substrate;
- forming a metal silicide layer overlying said semiconductor substrate;
- and
- forming a stacked capacitor including a bottom electrode directly on said metal silicide layer, a capacitor insulation film and a top electrode consecutively deposited,
- wherein each of said bottom and top electrodes includes a metal or a metal compound;
- and
- wherein said capacitor insulation film includes an aluminum oxide film having a thickness of 2 to 5 nm and disposed in direct contact with said bottom electrode.
Dependencies are inferred from the claim text.