Processes for curing silicon based low-k dielectric materials
AssigneeAxcelis Technologies, Inc.
InventorsDarren L. Moore, Carlo Waldfried, Ganesh Rajagopalan
Life of this patent
Estimating the term…
Abstract
Processes for curing silicon based low k dielectric materials generally includes exposing the exposing the silicon based low k dielectric material to ultraviolet radiation in an inert atmosphere having an oxidant in an amount of about 10 to about 500 parts per million for a period of time and intensity effective to cure the silicon based low k dielectric material so to change a selected one of chemical, physical, mechanical, and electrical properties and combinations thereof relative to the silicon based low k dielectric material prior to the ultraviolet radiation exposure. Also disclosed herein are silicon base low k dielectric materials substantially free of sub-oxidized SiO species.
Claims27
A process for curing silicon based low k dielectric materials, the process comprising:
- exposing the silicon based low k dielectric material to ultraviolet radiation in an inert atmosphere having an oxidant in an amount of about 10 to about 500 parts per million for a period of time and intensity effective to cure the silicon based low k dielectric material so as to change a selected one of chemical, physical, mechanical, and electrical properties and combinations thereof relative to the silicon based low k dielectric material prior to the ultraviolet radiation exposure.
A process for reducing formation of sub-oxidized species in silicon based low k dielectric materials during an ultraviolet radiation curing process, the process comprising:
- providing an inert atmosphere;
- providing an oxidant in the inert atmosphere during ultraviolet radiation exposure of the silicon based low k dielectric material;
- and
- exposing the silicon based dielectric material to ultraviolet radiation, wherein the amount of sub-oxidized SiO species formed are reduced relative to ultraviolet radiation exposure in the absence of the oxidant.
A silicon based low k dielectric material prepared by a process comprising:
- depositing the silicon based low k dielectric material onto a substrate;
- and
- exposing the silicon based low k dielectric material to ultraviolet radiation in an inert atmosphere having an oxidant in an amount of about 10 to about 500 parts per million for a period of time and intensity effective to cure the silicon based low k dielectric material so as to increase a selected one of chemical, physical, mechanical, and electrical properties and combinations thereof relative to the silicon based low k dielectric material prior to the ultraviolet radiation exposure.
Dependencies are inferred from the claim text.