Integrated chemical mechanical polishing composition and process for single platen processing
AssigneeAdvanced Technology Materials, Inc.
InventorsKarl E. Boggs, Michael S. Darsillo, Peter Wrschka, James Welch, Jeffrey Giles, Michele Stawasz
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Abstract
Chemical mechanical polishing (CMP) compositions and single CMP platen process for the removal of copper and barrier layer material from a microelectronic device substrate having same thereon. The process includes the in situ transformation of a Step I slurry formulation, which is used to selectively remove and planarize copper, into a Step II slurry formulation, which is used to selectively remove barrier layer material, on a single CMP platen pad.
Claims35
A CMP slurry composition comprising at least one passivating agent, at least one solvent, at least one abrasive, and optionally at least one pH adjustment agent, wherein said composition is further characterized by comprising at least one of the following components (I) or (II):
- (I) at least one oxidizing agent and at least one chelating agent, wherein said composition is useful for removing and planarizing copper;
- or
- (II) at least one barrier layer removal enhancer, at least one selectivity additive, and optionally at least one oxidizing agent, wherein said composition is useful for the selective removal and polishing of barrier layer material.
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A method of polishing a wafer substrate having copper and barrier layer material deposited thereon at a platen, said method comprising:
- contacting the microelectronic device substrate having copper thereon on the platen for sufficient time and under first chemical mechanical polishing (CMP) conditions with a first CMP slurry composition to substantially remove copper from the microelectronic device substrate and expose barrier layer material, wherein the first CMP slurry composition comprises at least one oxidizing agent, at least one passivating agent, at least one chelating agent, at least one solvent, and at least one acid-stable abrasive;
- and
- contacting the microelectronic device substrate having barrier layer material thereon on the same platen for sufficient time and under second CMP conditions with a second CMP slurry composition to substantially remove barrier layer material from the microelectronic device substrate, wherein the second CMP slurry composition comprises at least one passivating agent, at least one barrier layer removal enhancer, at least one selectivity additive, at least one solvent, at least one acid-stable abrasive, and optionally at least one oxidizing agent,
- with the proviso that the first and second CMP slurry compositions are devoid of persulfate and phosphorous acid and/or a salt thereof.
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A kit comprising, in one or more containers, Step I CMP slurry composition reagents, wherein the Step I CMP slurry composition comprises at least one passivating agent, at least one oxidizing agent, at least one chelating agent, at least one solvent, at least one acid-stable abrasive, and optionally at least one pH adjustment agent, and wherein one or more additional components suitable for combination with the Step I CMP slurry to form a Step II CMP slurry are optionally included in one or more containers, wherein the one or more additional components are selected from the group consisting of at least one barrier layer removal enhancer, at least one selectivity enhancer, and combinations thereof.
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Dependencies are inferred from the claim text.