Polishing process for producing damage free surfaces on semi-insulating silicon carbide wafers
AssigneeThe Penn State Research Foundation
InventorsWilliam J. Everson, David Snyder, Richard Gamble, Volker D. Heydemann
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Abstract
A polishing mixture and related method of polishing a material wafer surface, such as silicon carbide, are disclosed. The polishing mixture comprises; an abrasive and an oxidizer mixed in an acidic solution. Alumina may be used as the abrasive and the polishing mixture may have a pH less than or equal to seven (7).
Claims15
A chemical mechanical polishing process for treating a crystalline silicon carbide (SiC) surface, comprising:
- providing a polishing mixture;
- subjecting the surface to said polishing mixture;
- and
- maintaining the subjecting step until final roughness average of the surface is less than 5 Angstroms.
A process for treating a crystalline silicon carbide (SiC) surface, comprising:
- providing a polishing mixture;
- subjecting the surface to said polishing mixture;
- and
- maintaining the subjecting step until final roughness of the surface is less than 5 Angstroms, wherein material removal is non-selective.
A process for chemical mechanical polishing of a crystalline silicon carbide (SiC) surface, comprising:
- providing a polishing mixture;
- subjecting the surface to said polishing mixture;
- and
- maintaining the subjecting step to remove material from the surface at a removal rate of at least 150 nanometer per hour.
A chemical mechanical polishing mixture comprising:
- an abrasive mixture of alumina having corundum and boehmite;
- and
- an oxidizer together having a pH less than or equal to 7.
Dependencies are inferred from the claim text.