Method of manufacturing semiconductor device
AssigneeFujitsu Microelectronics Limited
InventorsSeiichi SHIBATA, Naoki IDANI, Takashi WATANABE
Life of this patent
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Abstract
A method of manufacturing a semiconductor device includes: polishing a semiconductor substrate to expose a polysilicon film on the semiconductor substrate using a chemical mechanical polishing method; cleaning the semiconductor substrate using a first acid cleaning solution; cleaning the semiconductor substrate with an ultrasonic wave using a second cleaning solution after cleaning the semiconductor substrate with said first acid cleaning solution; and cleaning the semiconductor substrate using a third cleaning solution, which is alkaline, after cleaning the semiconductor substrate with an ultrasonic wave.
Claims8
A method of manufacturing a semiconductor device, comprising:
- polishing a semiconductor substrate to expose a polysilicon film on the semiconductor substrate using a chemical mechanical polishing method;
- cleaning the semiconductor substrate using a first acid cleaning solution;
- cleaning the semiconductor substrate with an ultrasonic wave using a second cleaning solution after cleaning the semiconductor substrate with said first acid cleaning solution;
- and
- cleaning the semiconductor substrate using a third cleaning solution, which is alkaline, after cleaning the semiconductor substrate with an ultrasonic wave.
A method of manufacturing a semiconductor device, comprising:
- forming a polysilicon film on a semiconductor substrate;
- forming grooves in the semiconductor substrate by etching the polysilicon film and the semiconductor substrate;
- forming a thermally oxidized film on the inner surface of the grooves and on the surface of the polysilicon film according to a thermal oxidation method;
- forming an insulation film in the grooves and on the polysilicon film;
- embedding an element separation area composed of the insulation film in the grooves by polishing the insulation film using the chemical mechanical polishing method until the surface of the thermally-oxidized film is exposed;
- cleaning the semiconductor substrate using a first acid cleaning solution;
- cleaning with an ultrasonic wave using a second cleaning solution after cleaning the semiconductor substrate with said first acid cleaning solution;
- and
- cleaning the semiconductor substrate using a third cleaning solution, which is alkaline, after cleaning the semiconductor substrate with an ultrasonic wave.
Dependencies are inferred from the claim text.