Low-stain polishing composition
AssigneeRohm and Haas Electronic Materials CMP Holdings, Inc.
InventorsTerence M. Thomas, Hongyu Wang
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Abstract
The invention is an aqueous composition useful for chemical mechanical polishing of a patterned semiconductor wafer containing a copper interconnect metal. The aqueous composition includes an oxidizer, an inhibitor for the copper interconnect metal, 0.001 to 15 weight percent of a water soluble modified cellulose, non-saccaride water soluble polymer, 0 to 15 complexing agent for the copper interconnect metal, 0 to 15 weight percent phosphorus compound, 0.05 to 20 weight percent of an acid compound that is capable of complexing copper ions, and water; and the solution has an acidic pH.
Claims10
An aqueous composition useful for chemical mechanical polishing of a patterned semiconductor wafer containing a copper interconnect metal comprising an oxidizer, an inhibitor for the copper interconnect metal, 0.001 to 15 weight percent of a water soluble modified cellulose, non-saccaride water soluble polymer, 0 to 15 complexing agent for the copper interconnect metal, 0 to 15 weight percent phosphorus compound, 0.05 to 20 weight percent of an acid compound of a formula as follows:
- where R is hydrogen or a carbon-containing compound, the acid compound being capable of complexing copper ions, and water;
- and the solution having an acidic pH.
An aqueous composition useful for chemical mechanical polishing of a patterned semiconductor wafer containing a copper interconnect metal comprising 0.5 to 25 weight percent oxidizer, 0.01 to 15 weight percent inhibitor for the copper interconnect metal, 0.005 to 5 weight percent of a water soluble modified cellulose, 0.005 to 5 weight percent non-saccaride water soluble polymer, 0.05 to 10 weight percent phosphorus compound, 0.01 to 15 complexing agent for the copper interconnect metal, 0 to 3 weight percent abrasive, 0.1 to 10 weight percent of an acid compound of a formula as follows:
- where R is hydrogen or a carbon-containing compound, the acid compound being capable of complexing copper ions, and water;
- and the solution having an acidic pH.
A method for CMP of a semiconductor wafer containing a metal comprising, a) contacting the wafer with a polishing composition, the polishing composition comprising an oxidizer, an inhibitor for the copper interconnect metal, 0.001 to 15 weight percent of a water soluble modified cellulose, non-saccaride water soluble polymer, 0 to 15 complexing agent for the copper interconnect metal, 0 to 15 weight percent phosphorus compound, 0.05 to 10 weight percent of an acid compound of a formula as follows:
- where R is hydrogen or a carbon-containing compound, the acid compound being capable of complexing copper ions, and water, and the solution having an acidic pH;
- and b) polishing the wafer with a polishing pad.
Dependencies are inferred from the claim text.