Atomic layer deposition systems and methods including silicon-containing tantalum precursor compounds

A vapor deposition method comprising:

• contacting a vapor with a substrate using an atomic layer deposition process comprising a plurality of deposition cycles to form tantalum silicon nitride on at least one surface of the substrate;
• wherein the vapor comprises one or more compounds of the formula (Formula I):
• Ta(NR1)(NR2R3)3;
• wherein each R1, R2, and R3 is independently hydrogen or an organic group with the proviso that at least one of R1, R2, and R3 is a silicon-containing organic group;
• and
• wherein the tantalum silicon nitride is formed without using additional silicon-containing precursors.

A vapor deposition method comprising:

• contacting a vapor with a substrate comprising a silicon-containing surface, the vapor comprising one or more compounds of the formula (Formula I):
• Ta(NR1)(NR2R3)3, wherein each R1, R2, and R3 is independently hydrogen or an organic group, and with the proviso that at least one of R1, R2, and R3 is a silicon-containing organic group;
• allowing the one or more compounds to chemisorb on the silicon-containing surface of the substrate;
• and
• contacting at least one reaction gas with the substrate having the chemisorbed compounds thereon to form tantalum silicon nitride on the silicon-containing surface of the substrate;
• wherein the tantalum silicon nitride is formed without using additional silicon-containing precursors.

A vapor deposition method comprising:

• contacting a first vapor with a substrate, the first vapor comprising one or more compounds of the formula (Formula I):
• Ta(NR1)(NR2R3)3, wherein each R1, R2, and R3 is independently hydrogen or an organic group, and with the proviso that at least one of R1, R2, and R3 is a silicon-containing organic group;
• and
• contacting a second vapor with the substrate, the second vapor comprising one or more metal-containing compounds different than Formula I;
• wherein contacting comprises using an atomic layer deposition process comprising a plurality of deposition cycles to form tantalum silicon nitride on at least one surface of the substrate with the proviso that the one or more compounds of Formula I are the only silicon-containing precursors used.

A vapor deposition method comprising:

• contacting a vapor with a substrate using an atomic layer deposition process comprising a plurality of deposition cycles to form tantalum silicon nitride on at least one surface of the substrate;
• wherein the vapor comprises one or more compounds of the formula (Formula I):
• Ta(NR1)(NR2R3)3;
• wherein each R1, R2, and R3 is independently hydrogen or an organic group with the proviso that at least one of R1, R2, and R3 is a silicon-containing organic group;
• and
• wherein at least a portion of the silicon in the tantalum silicon nitride is provided by the one or more compounds of Formula I.

A method of manufacturing a memory device structure, the method comprising:

• contacting a vapor with a substrate comprising a silicon-containing surface, the vapor comprising one or more compounds of the formula (Formula I):
• Ta(NR1)(NR2R3)3, wherein each R1, R2, and R3 is independently hydrogen or an organic group, with the proviso that at least one of R1, R2, and R3 is a silicon-containing organic group, and wherein contacting comprises using an atomic layer deposition process comprising a plurality of deposition cycles to form tantalum silicon nitride on the silicon-containing surface of the substrate with the proviso that the one or more compounds of Formula I are the only silicon-containing precursors used;
• providing a first electrode on the tantalum silicon nitride;
• providing a high dielectric material on at least a portion of the first electrode;
• and
• providing a second electrode on the high dielectric material.