Methods of forming a barrier layer in an interconnect structure

A method of forming an interconnect structure on a substrate, comprising:

• providing a substrate having a first conductive layer disposed thereon;
• treating an upper surface of the first conductive layer with an oxygen containing gas;
• depositing a first barrier layer on the treated conductive layer;
• and
• depositing a second conductive layer on the first barrier layer while driving a portion of oxygen atoms from the treated conductive layer into the first barrier layer.

A method of forming an interconnection structure on a substrate, comprising:

• providing a substrate having a dielectric layer disposed on a first conductive layer, the dielectric layer having a via formed therein to expose a portion of an upper surface of the first conductive layer, wherein the first conductive layer is a copper layer;
• treating the exposed upper surface of the first conductive layer with an oxygen containing gas to incorporate oxygen atoms into the first conductive layer;
• depositing a first barrier layer within the via, the upper surface of the dielectric layer and the treated surface of the first conducive layer;
• and
• depositing a second conductive layer to fill the via formed within the dielectric layer.