Semiconductor device manufacturing method
AssigneeOki Semiconductor Co., Ltd.
InventorKiyonori Watanabe
Life of this patent
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Abstract
There is provide a semiconductor device manufacturing method, including: preparing a substrate; laminating an insulation layer on the substrate; laminating a first underlying metal layer on the insulation layer; forming rewiring on the first underlying metal layer; removing exposed portions of the first underlying metal layer; laminating a second underlying metal layer on the rewiring and the insulation layer; forming a column electrode on the rewiring via the second underlying metal layer; and removing exposed portions of the second underlying metal layer.
Claims9
A semiconductor device manufacturing method, comprising:
- preparing a substrate;
- laminating an insulation layer on the substrate;
- laminating a first underlying metal layer on the insulation layer;
- forming rewiring on the first underlying metal layer;
- removing exposed portions of the first underlying metal layer;
- laminating a second underlying metal layer on the rewiring and the insulation layer;
- forming a column electrode on the rewiring via the second underlying metal layer;
- and
- removing exposed portions of the second underlying metal layer.
A semiconductor device manufacturing method, comprising:
- preparing a substrate;
- laminating an insulation layer on the substrate;
- sequentially laminating an underlying metal adhesive layer and an underlying metal antioxidant layer on the insulation layer;
- forming rewiring on the underlying metal antioxidant layer;
- removing exposed portions of the underlying metal antioxidant layer;
- forming a column electrode on the rewiring;
- and
- removing exposed portions of the underlying metal adhesive layer.
Dependencies are inferred from the claim text.