Manufacturing method of semiconductor device
AssigneeRenesas Technology Corp.
InventorsTakashi Sato, Junichi Takano, Takashi Sato, Tokuo Naitou
Life of this patent
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Abstract
Illumination devices (7a) and (7b) which irradiate light having a wavelength of 1.1 μm or less are arranged on a front surface and a rear surface of a cover (8) of a dicing device (1). After a wafer is placed on a dicing stage (3), when the wafer is diced by a blade (4a) attached to a spindle (5), light is irradiated on an entire surface of an upper surface (element forming surface) of the wafer by the illumination devices (7a) and (7b). At this time, an illuminance of light on the wafer is set at 70 lux or more and 2000 lux or less. By this means, during a dicing operation, an area to be a light-shielded area by the spindle (5) or the like is not present on the wafer.
Claims21
1-20. (canceled)
A method of manufacturing a semiconductor device, comprising steps of:
- (a) placing a wafer, on which a wafer process has been completed, on a dicing stage included in a dicing process unit,
- the dicing process unit being covered with a semi-transparent cover or a light-shielding cover and being included in a dicing device,
- the wafer having a first main surface on which a semiconductor device having electrodes containing aluminum as a main component is formed;
- and
- (b) cutting a scribe area from the first main surface using first and second dicing blades held so that side surfaces of the first and second dicing blades are opposed to each other while supplying at least one of water and a solution containing water as a main component to the first main surface of the wafer,
- wherein, in cutting the scribe area, an average illuminance of the first main surface is kept at not less than 70 lux.
A method of manufacturing a semiconductor device, comprising steps of:
- (a) placing a wafer, on which a wafer process has been completed, on a dicing stage included in a dicing process unit included in a dicing device,
- the wafer having a first main surface on which a semiconductor device having electrodes containing aluminum as a main component is formed;
- and
- (b) cutting a scribe area from the first main surface by first and second dicing blades held so as to be disposed in substantially the same plane while supplying at least one of water and a chemical solution containing water as a main component to the first main surface of the wafer,
- wherein, in cutting the scribe area, an average illuminance of the first main surface is kept at not less than 70 lux, and a minimum illuminance on the first main surface is kept so that the illuminance does not become lower than 70 lux at any position on the first main surface.
A method of manufacturing a semiconductor device, comprising steps of:
- (a) placing a wafer, on which a wafer process has been completed, on a dicing stage included in a dicing process unit of a dicing device,
- the wafer having a first main surface on which a semiconductor device having electrodes containing aluminum as a main component is formed;
- and
- (b) cutting a scribe area from the first main surface by a dicing blade while supplying at least one of water and a chemical solution containing water as a main component to the first main surface of the wafer,
- wherein, in cutting the scribe area, an average illuminance of the first main surface is kept at not less than 70 lux.
Dependencies are inferred from the claim text.