Arrangement with Two Transistors and Method for the Production Thereof

A method for the fabrication of a high-voltage transistor, comprising the steps of:

• forming, in a substrate, a first deep well of a first conductivity type and a second deep well of a second conductivity type;
• performing by means of a mask, a first implantation of dopant for the second conductivity type, with which a doped region is formed on a top side of the substrate at a side of the second deep well;
• performing, by means of another mask, a second implantation of dopant;
• forming a channel zone of defined length and an LDD region adjacent to the channel zone on a side facing away from the second deep well by setting the conductivity type of the second implantation and also the areas of the first and second implantations defined by the respective masks;
• producing a gate oxide;
• producing a gate electrode arranged above the gate oxide in the area of the channel zone, and
• after the fabrication of the gate electrode:
• producing a doped region for a body contact by means of another implantation for the first conductivity type;
• and
• performing a terminal doping, which is provided for a source contact and which reinforces the LDD implant of the LDD region at a distance to the gate electrode, by means of another implantation for the second conductivity type.