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US 2009/0215233 A1Published application
Photoresist composition and method of manufacturing array substrate using the same
AssigneesSamsung Electronics Co., Ltd., AZ Electronic Materials (Japan) K.K.
InventorsHi-Kuk Lee, Sang-Hyun Yun, Min-Soo Lee, Deok-Man Kang, Sae-Tae Oh, Jae-Young Choi
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Abstract
A photoresist composition includes a binder resin, a photo acid generator, an acryl resin having four different types of monomers, and a solvent.
Claims20
A photoresist composition, comprising:
- a binder resin;
- a photo acid generator;
- an acryl resin represented by Chemical Formula 1;
- and
- a solvent,
- wherein R1, R2, R3, R4, and R5 each represent a hydrogen atom or an alkyl group having 1-4 carbon atoms, and a, b, d, and e each represent a value in a range of about 0.01 to about 0.99, and the sum of a, b, d, and e is 1.
3 more elements
A method of manufacturing an array substrate, comprising:
- forming a gate line and a gate electrode on a base substrate;
- forming a gate insulation layer, an active layer, and a data metal layer on the base substrate formed the gate line and the gate electrode;
- forming a photoresist film using a photoresist composition comprising a binder resin, a photo acid generator, an acryl resin represented by Chemical Formula 1, and a solvent, the photoresist film formed on the data metal layer;
- forming a first photoresist pattern by patterning the photoresist film, the first photoresist pattern comprising a source electrode/line portion having a first thickness, a drain electrode portion having the first thickness, and a channel forming portion having a second thickness;
- forming a data line and a channel portion by etching the data metal layer and the active layer using the first photoresist pattern as a mask;
- forming a second photoresist pattern by removing the channel forming portion of the first photoresist pattern, the second photoresist pattern exposing a portion of the data metal layer;
- forming a source electrode and a drain electrode by etching the data metal layer using the second photoresist pattern as a mask;
- and
- forming an ohmic contact pattern by etching the active layer using the second photoresist pattern as a mask,
- wherein R1, R2, R3, R4, and R5 each represent a hydrogen atom or an alkyl group having 1-4 carbon atoms, and a, b, d, and e each represent a value in a range of about 0.01 to about 0.99, and the sum of a, b, d, and e is 1.
7 more elements
Dependencies are inferred from the claim text.