Manufacturing method of semiconductor device

A manufacturing method of a semiconductor device, in which the semiconductor device includes:

• a semiconductor chip;
• a first conductor section joined to a first principal surface of the semiconductor chip;
• a second conductor section joined to a second principal surface of the semiconductor chip on the opposite side to the first principal surface;
• and an encapsulation resin section sealing the semiconductor chip and part of the first and second conductor sections, and in the semiconductor device, the front surface of the first conductor section is exposed from a first surface of the encapsulation resin section and the front surface of the second conductor section is exposed from a second surface of the encapsulation resin section on the opposite side to the first surface,
• the manufacturing method comprising the steps of:
• (a) mounting the semiconductor chip over the first conductor section with a first silver paste in-between so that the first principal surface of the semiconductor chip is opposed to the first conductor section;
• (b) mounting the second conductor section over the second principal surface of the semiconductor chip with a second silver paste in-between;
• (c) curing the first and second silver pastes to join the first conductor section to the first principal surface of the semiconductor chip and join the second conductor section to the second principal surface of the semiconductor chip;
• and
• (d) after the step of (c), forming the encapsulation resin section sealing the semiconductor chip, the first conductor section, and the second conductor section,
• wherein the first and second silver pastes used at the step of (a) and the step of (b) contain Ag filler, thermosetting resin as base resin, and spacer particles.

A manufacturing method of a semiconductor device comprising the steps of:

• (a) preparing a semiconductor chip having a first principal surface and a second principal surface positioned on the opposite side to each other;
• (b) joining a first conductor section to the first principal surface of the semiconductor chip with a first bonding material in-between and joining a second conductor section to the second principal surface of the semiconductor chip with a second bonding material in-between;
• (c) sticking an insulating sheet to the surface of the second conductor section on the opposite side to the side where the second conductor section is opposed to the semiconductor chip;
• and
• (d) after the step of (c), forming an encapsulation resin section sealing the semiconductor chip, the first conductor section, the second conductor section, and the insulating sheet,
• wherein the front surface of the insulating sheet is exposed from a first surface of the encapsulation resin section, and
• wherein the front surface of the first conductor section is exposed from a second surface of the encapsulation resin section on the opposite side to the first surface.

A manufacturing method of a semiconductor device comprising the steps of:

• (a) preparing a first semiconductor device including a first semiconductor chip, a first conductor section joined to a first principal surface of the first semiconductor chip, a second conductor section joined to a second principal surface of the first semiconductor chip on the opposite side to the first principal surface, and a first encapsulation resin section sealing the first semiconductor chip, the first conductor section, and the second conductor section, and preparing a second semiconductor device including a second semiconductor chip, a third conductor section joined to a third principal surface of the second semiconductor chip, a fourth conductor section joined to a fourth principal surface of the second semiconductor chip on the opposite side to the third principal surface, and a second encapsulation resin section sealing the second semiconductor chip, the third conductor section, and the fourth conductor section;
• (b) mounting the second semiconductor device over a first surface of the first encapsulation resin section of the first semiconductor device with a first film member and a first conductive bonding material in-between;
• and
• (c) curing the first bonding material to join the second semiconductor device to over the first surface of the first encapsulation resin section of the first semiconductor device,
• wherein in the first semiconductor device, the front surface of the first conductor section is exposed from the first surface of the first encapsulation resin section and the front surface of the second conductor section is exposed from a second surface of the first encapsulation resin section on the opposite side to the first surface,
• wherein in the second semiconductor device, the front surface of the third conductor section is exposed from a third surface of the second encapsulation resin section and the front surface of the fourth conductor section is exposed from a fourth surface of the second encapsulation resin section on the opposite side to the third surface,
• wherein at the step of (b), the second semiconductor device is mounted so that the fourth surface of the second encapsulation resin section of the second semiconductor device is opposed to the first surface of the second encapsulation resin section of the second semiconductor device, and
• wherein at the step of (c), the front surface of the first conductor section exposed from the first surface of the first encapsulation resin section and the front surface of the fourth conductor section exposed from the fourth surface of the second encapsulation resin section are joined and electrically coupled together by the first bonding material.

A manufacturing method of a semiconductor device comprising the steps of:

• (a) preparing a first semiconductor device including a first semiconductor chip, a first conductor section joined to a first principal surface of the first semiconductor chip, a second conductor section joined to a second principal surface of the first semiconductor chip on the opposite side to the first principal surface, and a first encapsulation resin section sealing the first semiconductor chip, first conductor section, and second conductor section and preparing a second semiconductor device including a second semiconductor chip, a third conductor section joined to a third principal surface of the second semiconductor chip, a fourth conductor section joined to a fourth principal surface of the second semiconductor chip on the opposite side to the third principal surface, and a second encapsulation resin section sealing the second semiconductor chip, third conductor section, and fourth conductor section;
• (b) placing the second semiconductor device over a first surface of the first encapsulation resin section of the first semiconductor device with silver paste containing Ag filler, thermosetting resin as base resin, and spacer particles in-between;
• and
• (c) curing the silver paste to join the second semiconductor device to over the first surface of the first encapsulation resin section of the first semiconductor device,
• wherein in the first semiconductor device, the front surface of the first conductor section is exposed from the first surface of the first encapsulation resin section and the front surface of the second conductor section is exposed from a second surface of the first encapsulation resin section on the opposite side to the first surface,
• wherein in the second semiconductor device, the front surface of the third conductor section is exposed from a third surface of the second encapsulation resin section and the front surface of the fourth conductor section is exposed from a fourth surface of the second encapsulation resin section on the opposite side to the third surface,
• wherein at the step of (b), the second semiconductor device is mounted so that the fourth surface of the second encapsulation resin section of the second semiconductor device is opposed to the first surface of the first encapsulation resin section of the first semiconductor device,
• wherein at the step of (c), heat treatment is carried out while pressure is applied to between the first semiconductor device and the second semiconductor device with the silver paste sandwiched therebetween and the silver paste is thereby cured and as a result, the front surface of the first conductor section exposed from the first surface of the first encapsulation resin section and the front surface of the fourth conductor section exposed from the fourth surface of the second encapsulation resin section are joined and electrically coupled together by the cured silver paste.

A manufacturing method of a semiconductor device comprising the steps of:

• (a) mounting a first semiconductor chip over a first conductor section with a first silver paste in-between so that a first principal surface of the first semiconductor chip is opposed to the first conductor section;
• (b) mounting a second conductor section over a second principal surface of the first semiconductor chip on the opposite side to the first principal surface with a second silver paste in-between;
• (c) mounting a second semiconductor chip over the surface of the second conductor section on the opposite side to the side where the second conductor section is opposed to the first semiconductor chip with a third silver paste in-between so that a third principal surface of the second semiconductor chip is opposed to the second conductor section;
• (d) mounting a third conductor section over a fourth principal surface of the second semiconductor chip on the opposite side to the third principal surface with a fourth silver paste in-between;
• (e) curing the first, second, third, and fourth silver pastes to join the first conductor section to the first principal surface of the first semiconductor chip, join the second conductor section to the second principal surface of the first semiconductor chip, join the second conductor section to the third principal surface of the second semiconductor chip, and join the third conductor section to the fourth principal surface of the second semiconductor chip;
• and
• (f) after the step of (e), forming an encapsulation resin section sealing the first and second semiconductor chips and the first, second, and third conductor sections,
• wherein the first, second, third, and fourth silver pastes used at the step of (a), the step of (b), the step of (c), and the step of (d) contain Ag filler, thermosetting resin as base resin, and spacer particles, and
• wherein at the step of (e), heat treatment is carried out while pressure is applied to between the first conductor section and the third conductor section with the first semiconductor chip, the second conductor section, and the second semiconductor chip sandwiched therebetween and the first, second, third, and fourth silver pastes are thereby cured and as a result, the front surface of the first conductor section is exposed from a first surface of the encapsulation resin section and the front surface of the third conductor section is exposed from a second surface of the encapsulation resin section on the opposite side to the first surface.