Tellurium compounds useful for deposition of tellurium containing materials
AssigneeAdvanced Technology Materials, Inc.
InventorsMatthias Stender, Chongying Xu, Tianniu Chen, William Hunks, Philip S.H. Chen, Jeffrey F. Roeder, Thomas H. Baum
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Abstract
Precursors for use in depositing tellurium-containing films on substrates such as wafers or other microelectronic device substrates, as well as associated processes of making and using such precursors, and source packages of such precursors. The precursors are useful for deposition of chalcogenide thin films in the manufacture of nonvolatile Phase Change Memory (PCM), by deposition techniques such as chemical vapor deposition (CVD) and atomic layer deposition (ALD).
Claims20
A tellurium precursor composition, including a tellurium precursor selected from the group consisting of:
- (i) Te(IV) organyls having the formula TeR1R2R3R4 wherein each of R1, R2, R3 and R4 is the same as or different from others, and each is independently selected from H, halogen, C1-C6 alkyl, C1-C6 alkoxy, C3-C8 cycloalkyl, C6-C10 aryl, silyl, substituted silyl, amide, aminoalkyl, alkylamine, alkoxyalkyl, aryloxyalkyl, imidoalkyl and acetylalkyl;
- (ii) tellurium bis-amides of the formula Te[NR2]2 wherein each R is independently selected from H, C1-C6 alkyl, C1-C6 alkoxy, C3-C8 cycloalkyl, C6-C10 aryl, silyl, substituted silyl, aminoalkyl, alkoxyalkyl, aryloxyalkyl, imidoalkyl and acetylalkyl;
- (iii) asymmetric tellurium compounds including one alkyl substituent and a second ligand containing a heteroatom;
- (iv) tellurium compounds with ethylenediamine ligands;
- (v) tellurium compounds with dithiocarbamate ligands;
- (vi) Te(II) and Te(IV) compounds including at least one nitrogen-based ligand selected from among amidinates, guanidinates, isoureates and beta-diketoiminates;
- and
- (vii) dialkyl ditellurides wherein alkyl is C1-C8 alkyl.
A method of depositing tellurium on a substrate, comprising volatilizing a tellurium precursor composition to form a tellurium precursor vapor, and contacting the tellurium precursor vapor with the substrate to deposit tellurium thereon, wherein the tellurium precursor composition comprises a tellurium precursor selected from the group consisting of:
- (i) Te(IV) organyls having the formula TeR1R2R3R4 wherein each of R1, R2, R3 and R4 is the same as or different from others, and each is independently selected from H, halogen, C1-C6 alkyl, C1-C6 alkoxy, C3-C8 cycloalkyl, C6-C10 aryl, silyl, substituted silyl, amide, aminoalkyl, alkylamine, alkoxyalkyl, aryloxyalkyl, imidoalkyl and acetylalkyl;
- (ii) tellurium bis-amides of the formula Te[NR2]2 wherein each R is independently selected from H, C1-C6 alkyl, C-C6 alkoxy, C3-C8 cycloalkyl, C6-C10 aryl, silyl, substituted silyl, aminoalkyl, alkoxyalkyl, aryloxyalkyl, imidoalkyl and acetylalkyl;
- (iii) asymmetric tellurium compounds including one alkyl substituent and a second ligand containing a heteroatom;
- (iv) tellurium compounds with ethylenediamine ligands;
- (v) tellurium compounds with dithiocarbamate ligands;
- (vi) Te(II) and Te(IV) compounds including at least one nitrogen-based ligand selected from among amidinates, guanidinates, isoureates and beta-diketoiminates;
- and
- (vii) dialkyl ditellurides wherein alkyl is C1-C8 alkyl.
Dependencies are inferred from the claim text.