Method of manufacturing light emitting diode device

A method of manufacturing light-emitting diode (LED) device having a flip-chip structure comprising steps of:

• mounting at least one flip-chip structure on a top of a base wherein a wire-bonding region is disposed on the top of the base and surrounding the at least one flip-chip structure, each of the at least one flip chip structure comprising
• a transparent substrate having a back surface;
• and
• a transparent electrode layer being as a light-emitting side of the flip chip structure and being mounted on the back surface of the transparent substrate;
• isolating the transparent electrode layer from the wire-bonding region by disposing a partition panel on the wire-bonding region;
• coating a slurry of phosphors on the transparent electrode layer;
• evaporating solvents of the slurry by heating to solidify the phosphors and thereby form a phosphor layer;
• removing the partition panel;
• and
• cutting the base into sections to form at least one single-unit LED devices having a flip-chip structure.

A method of manufacturing light-emitting diode (LED) device having a flip-chip structure comprising steps of:

• mounting at least one flip chip structure on a top of a base wherein a metal joint layer is disposed between the at least one flip-chip structure and the top of the base, and a periphery part of the metal joint layer surrounds the at least one flip-chip structure, each of the at least one flip-chip structure comprising
• a reflective metal layer being opposite to the metal joint layer;
• and
• a n-type semiconductor layer being as a light-emitting side;
• disposing a partition panel on the periphery part of the metal joint layer to isolate the n-type semiconductor layer from the periphery part of the metal joint layer;
• coating a slurry of phosphors on the n-type semiconductor layer;
• evaporating solvents of the slurry by heating to solidify the phosphors and thereby form a phosphor layer;
• removing the partition panel;
• and
• cutting the base into sections to form at least one single-unit LED device having a flip-chip structure.

A method of manufacturing light-emitting diode (LED) device having a vertical chip structure comprising steps of:

• mounting at least one vertical chip structure on a top of a base and each of the at least one vertical chip structure comprising a p side electrode, a p-type semiconductor layer, a light-emitting layer, a n-type semiconductor layer and a transparent electrode layer being sequentially disposed on the base, wherein the transparent electrode layer functions as a light-emitting side and a wire-bonding region is disposed on a part of the transparent electrode layer;
• disposing a partition panel on the wire-bonding region to isolate the wire-bonding region from the rest of the transparent electrode layer;
• coating a slurry of phosphors on the transparent electrode layer;
• evaporating solvents of the slurry by heating to solidify the phosphors to form a phosphor layer;
• removing the partition panel;
• and
• cutting the base into sections to form at least one single-unit LED device having a vertical chip structure.