Shower head structure for processing semiconductor

A method for performing semiconductor processing while providing a processing gas into a processing space accommodating a substrate to be processed, comprising the steps of:

• heating, by using a heating means, the substrate disposed on a susceptor installed in a processing chamber forming the processing space and capable of being pumped in vacuum;
• performing the semiconductor processing by providing the processing gas from a plurality of gas injection holes of a shower head toward the substrate heated by the heating means;
• while performing the semiconductor processing, controlling the heating means based on a detected value of a temperature measuring device installed at the susceptor;
• executing dummy processing by heating a dummy substrate for temperature correction placed on the susceptor by the heating means;
• while, performing the dummy processing, monitoring the temperature of the dummy substrate by using one or more radiation thermometers each having a light introducing rod inserted through one of the gas injection holes;
• and
• correcting a setting temperature of the susceptor based on a detected value of each radiation thermometer and a target temperature value of the substrate.

A method for performing semiconductor processing on a substrate accommodated in a processing space comprising the steps of:

• heating, by using a heating means, the substrate disposed on a susceptor installed in a processing chamber forming the processing space and capable of being pumped in vacuum;
• employing a shower head to perform the semiconductor processing by providing a first and a second gas from a first and a second gas injection holes of the shower head toward the substrate heated by the heating means, wherein the shower head includes a first head space and a second head space formed therein, the first head space being separated from the second head space, and the first and the second gas are introduced to the first gas injection holes and the second gas injection holes through the first and the second head space, respectively, and wherein the shower head further includes a heat ray introducing passage formed therethrough and separated from the first and the second head space;
• and
• while performing the semiconductor processing, controlling the heating means based on a detected value of a radiation thermometer facing through a measurement window at an upper opening part of the heat ray introducing passage,
• wherein a gas introducing passage is formed inside the shower head and connected to the heat ray introducing passage to introduce an additional gas thereinto, the gas introducing passage being separated from the first and the second head space, and the additional gas being introduced into the processing space through the heat ray introducing passage while performing the semiconductor processing, and
• wherein the additional gas, the first gas, and the second gas are different from each other.