Fabrication method of semiconductor device

A fabrication method of a semiconductor device, comprising the steps of:

• (a) providing a semiconductor wafer having a main surface and a back surface, the main surface being partitioned into a plurality of chip areas by dividing areas, with an integrated circuit being formed in each of the chip areas, the back surface having a pressure-sensitive adhesive tape affixed thereto;
• (b) cutting the semiconductor wafer along the dividing areas into a plurality of semiconductor chips and holding the semiconductor chips with the pressure-sensitive adhesive tape;
• (c) radiating first irradiation light emitted from a first light source, from above, to an upper surface of a first semiconductor chip to be peeled off from the pressure-sensitive adhesive tape out of the semiconductor chips held with the adhesive tape, radiating second irradiation light to the upper surface of the first semiconductor chip from two second light sources disposed so as to sandwich the first semiconductor chip therebetween in plan, receiving first reflected light from the upper surface of the semiconductor chip by image pickup means, and acquiring a first image of the upper surface of the first semiconductor chip;
• (d) on the basis of the first image acquired in the step (c), determining whether the first semiconductor chip is present or not and whether the first semiconductor chip is good of bad, and if the first semiconductor chip is determined to be present as a good chip on the basis of the first image, chucking and holding the upper surface of the first semiconductor chip by a chucking collet and thereby peeling off the first semiconductor chip from the pressure-sensitive adhesive tape;
• and
• (e) after the step (d), die-bonding a lower surface of the first semiconductor chip to a chip mounting area while chucking and holding the upper surface of the first semiconductor chip by the chucking collet,
• wherein the angle of incidence of the second irradiation light on the upper surface of the first semiconductor chip is 10° to 60°.