Biaxially oriented film on flexible polymeric substrate
AssigneeThe Regents of the University of California
InventorsAlp T. Finkikoglu, Vladimir Matias
Life of this patent
Estimating the term…
Abstract
A flexible polymer-based template having a biaxially oriented film grown on the surface of a polymeric substrate. The template having the biaxially oriented film can be used for further epitaxial growth of films of interest for applications such as photovoltaic cells, light emitting diodes, and the like. Methods of forming such a flexible template and providing the polymeric substrate with a biaxially oriented film deposited thereon are also described.
Claims46
A flexible template for a device, the flexible template comprising:
- a. a flexible polymeric substrate comprising a polyimide;
- b. a biaxially oriented intermediate layer disposed over the polymeric substrate;
- and
- c. a biaxially oriented buffer layer epitaxially grown on the intermediate layer;
- and
- d. at least one semiconducting active layer disposed over the biaxially oriented buffer layer.
(canceled)
(canceled)
(canceled)
(canceled)
(canceled)
(canceled)
(canceled)
(canceled)
(canceled)
(canceled)
(canceled)
(canceled)
(canceled)
(canceled)
(canceled)
(canceled)
(canceled)
(canceled)
(canceled)
A flexible template, the flexible template comprising:
- a. a flexible polyimide substrate;
- b. a biaxially oriented intermediate layer disposed over the polyimide substrate, wherein the intermediate layer is deposited by ion beam assisted deposition and has a face-centered cubic-based structure, and wherein the intermediate layer is one of a nitride and an oxide;
- and
- c. a biaxially oriented buffer layer epitaxially grown on the intermediate layer.
A flexible template, the flexible template comprising:
- a. a flexible polyimide substrate;
- b. a nucleation layer disposed on a surface of the polyimide substrate, wherein the nucleation layer comprises Y2O3 and Si3N4;
- c. a biaxially oriented intermediate layer disposed on the nucleation layer, wherein the intermediate layer is deposited by ion beam assisted deposition and has a face-centered cubic-based crystal structure, and wherein the intermediate layer is one of a nitride and an oxide;
- and
- d. a biaxially oriented buffer layer epitaxially grown on the intermediate layer.
Dependencies are inferred from the claim text.