Method of applying a pattern of metal, metal oxide and/or semiconductor material on a substrate

The method according to any of the foregoing claims, wherein said polymeric material is selected from the group comprising polyesters of carboxylic acids, polyanhydrides of carboxylic acids, polycarbonates and mixtures of any of the foregoing.

The method according to any of the foregoing claims, wherein said polymeric material is selected from the group comprising polymethylmethacrylate (PMMA), polyethylene terephthalate, cellulose acetate and poly(oxycarbonyloxo-1,4-phenylene-isopropylidene-1,4-phenylene)(polycarbonate).

The method according to any of the foregoing claims wherein said polymeric material is polymethylmethacrylate (PMMA).

The method according to any of the foregoing claims, wherein said water soluble material is selected from the group comprising polyacrylic acid, polyvinyl alcohol and polyacrylamide.

The method according to any of the foregoing claims, wherein step c) is performed by optical lithography, nano-imprint lithography, UV nano-imprint lithography, e-beam lithography, or soft lithography.

The method according to any of the foregoing claims, wherein step f) is performed by placing said first substrate and the various layers on it, resulting from steps b)-e), in said bulk of water or said bulk of aqueous solution and soaking it for a period of from 1 s to 3 h, preferably from 1 min to 30 min, more preferably from 5 min to 25 min, preferably at a temperature in the range of from 10° C. to 90° C.

The method according to any of the foregoing claims, wherein said support layer is made of a resist material, preferably selected from photoresists, such as epoxy based photoresists.

The method according to any of the foregoing claims, wherein said layer of water soluble material has a thickness in the range of from 10 nm to 1 μm, preferably 100 nm to 500 nm, more preferably from 200 nm to 450 nm, and even more preferably 300 nm to 400 nm.

The method according to any of the foregoing claims, wherein said layer of polymeric material has a thickness in the range of from 20 nm to 1 μm, preferably 100 nm to 500 nm, more preferably 200 nm to 400 nm.

The method according to any of the foregoing claims, wherein said metal is selected from the group comprising Au, Ti, Pt, Ag, Cr, Cu, Al, and said metal oxide is selected from the group comprising Al2O3, AgO, TiO2, SiO2, and said semiconductor material is selected from the group comprising Si, Ge, GaAs, GaN, InSb, InP, CdS, ZnSe.

The method according to any of the foregoing claims, wherein said first substrate is made of a material selected from the group comprising single crystalline materials, polycrystalline materials, materials such as GaAs, Si, SiO2, mica, amorphous composites, such as glass and float glass, and perovskites.

The method according to any of the foregoing claims, wherein said first substrate is made of silicon.

The method according to any of the foregoing claims wherein said metal is Au or Al.

The method according to any of the foregoing claims, wherein said second substrate is structured with bottom electrodes and has a molecular layer on a surface, and said pattern of metal, metal oxide and/or semiconductor material is applied on said surface in step g) of the method according to any of the foregoing claims.

A pattern of metal, metal oxide and/or semiconductor material on a substrate, prepared by the method according to any of the foregoing claims.