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AssigneeSoitec
InventorsChantal Arena, Christiaan J. Werkhoven, Ronald Thomas Bertram, JR., Ed Lindow
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The present invention relates to the field of semiconductor processing and provides apparatus and methods that improve chemical vapor deposition (CVD) of semiconductor materials by promoting more efficient thermalization of precursor gases prior to their reaction. In preferred embodiments, the invention comprises heat transfer structures and their arrangement within a CVD reactor so as to promote heat transfer to flowing process gases. In certain preferred embodiments applicable to CVD reactors transparent to radiation from heat lamps, the invention comprises radiation-absorbent surfaces placed to intercept radiation from the heat lamps and to transfer it to flowing process gases.
A thermalization apparatus for use within a heated CVD reactor chamber, the apparatus comprising one or more heat transfer structures arranged to receive heat from one or more chamber heat sources and to deliver the received heat to one or more process gases flowing within the chamber, at least part of the heat being delivered to the process gases prior to their CVD reaction at a substrate within the chamber.
A thermalization apparatus for use with a chemical vapor deposition (CVD) apparatus, the CVD apparatus comprising a heated reactor chamber within which are arranged additional components comprising at least one of a susceptor and a susceptor support ring, the thermalization apparatus comprising:
A method for carrying out a CVD reaction between two or more process gases at a substrate within the interior of a CVD reactor chamber comprising:
Dependencies are inferred from the claim text.