Doping with ald technology
AssigneeASM America, Inc.
InventorsChang-gong Wang, Eric Shero
Life of this patent
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Abstract
Methods for doping a substrate surface or the interface between two thin films by atomic layer deposition process (ALD) are provided. By blocking some of the available binding sites for a dopant precursor with a blocking reactant, the concentration and uniformity of dopant deposited can be controlled. The blocking reactant may be introduced prior to introduction of the dopant precursor in the ALD process, or the blocking reactant and the dopant precursor can be introduced simultaneously.
Claims31
A method for doping the interface between two films on a substrate with a sub-monolayer of dopant comprising:
- depositing a sub-monolayer of dopant on a first film on the substrate by a single atomic layer deposition cycle comprising:
- contacting the substrate with a first reactant that is a blocking reactant such that the blocking reactant adsorbs in a self-limiting manner on the first film;
- removing excess blocking reactant from the reaction space;
- contacting the substrate with a second reactant that is a dopant precursor such that the dopant precursor adsorbs in a self limiting manner on the surface of the first film;
- removing excess dopant precursor;
- and
- contacting the substrate with a third reactant that reacts with
- the dopant precursor to form a dopant on the first film;
- and
- subsequently depositing a second thin film over the dopant,
- wherein the blocking reactant and dopant precursor are selected such that a desired concentration of dopant is deposited on the first film.
A method for doping an interface between a dielectric thin film and a gate electrode comprising:
- depositing a dielectric thin film on a substrate in a reaction space;
- depositing hafnium on the surface of the dielectric thin film by a single-cycle atomic layer deposition process;
- and
- after depositing the hafnium depositing a gate electrode over the dielectric thin film, wherein the single-cycle ALD process comprises:
- contacting the dielectric thin film with a blocking reactant such that the blocking reactant adsorbs in a self-limiting manner on the surface of the dielectric thin film;
- removing excess blocking reactant from the reaction space;
- contacting the dielectric thin film with a dopant precursor comprising Hf such that the dopant precursor adsorbs in a self limiting manner on the surface of the dielectric thin film;
- and
- removing excess dopant precursor,
- wherein the blocking reactant and dopant precursor are selected such that a desired concentration of Hf is deposited on the dielectric thin film.
Dependencies are inferred from the claim text.