Preparation of thin film for solar cell using paste
AssigneeKorea Institute of Science and Technology
InventorsOh-shim JOO, Byoung Koun MIN, Kwang Deog JUNG, Jun-haeng LEE
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Abstract
A preparation method of a CIS-based or CIGS-based thin film for a light absorption layer of a solar cell, which uses a paste prepared by mixing precursors of Cu, In, Se, and optional Ga in a solvent, minimizes the raw material loss, does not produce a toxic gas during the process, and is suitable for producing a large scale film at a low production cost.
Claims22
A method for preparing a CIS (Copper-Indium-Selenide)-based or CIGS (Copper-Indium-Gallium-Selenide)-based thin film for a light absorption layer of a solar cell, comprising the steps of:
- (1) mixing precursors of Cu and In, optionally with a precursor of Ga to obtain a mixture, and optionally heating the mixture to obtain an oxide mixture;
- (2) adding a Se precursor to the mixture or the oxide mixture and adding the resulting mixture to an aqueous or alcohol solvent to obtain a paste;
- and
- (3) coating the paste on a substrate and heating the coated substrate under an inert or reducing gas atmosphere.
A method for preparing a CIS (Copper-Indium-Selenide)-based or CIGS (Copper-Indium-Gallium-Selenide)-based powder, comprising the steps of:
- (1) mixing precursors of Cu and In, optionally with a precursor of Ga to obtain a mixture, and optionally heating the mixture to obtain an oxide mixture;
- and
- (2) adding a Se precursor to the mixture or the oxide mixture and heating the resulting mixture under an inert or reducing gas atmosphere at a temperature of 200 to 700° C.
Dependencies are inferred from the claim text.