Plasma processing method
AssigneeHitachi High-Technologies Corporation
InventorsMasunori ISHIHARA, Masamichi SAKAGUCHI, Yasuhiro NISHIMORI, Yutaka KUDOU, Satoshi UNE
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AssigneeHitachi High-Technologies Corporation
InventorsMasunori ISHIHARA, Masamichi SAKAGUCHI, Yasuhiro NISHIMORI, Yutaka KUDOU, Satoshi UNE
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The invention provides a plasma processing method capable of reducing particle caused by flinging up of particles by airflow due to the pressure fluctuation in the processing chamber during the time the sample is carried into the processing chamber, subjected to plasma processing and carried out of the processing chamber. The invention provides a plasma processing method using a plasma processing apparatus comprising multiple plasma processing chambers for processing samples, a transfer chamber connected to the processing chambers for transferring samples, and a supply system for supplying gas which is the same gas as a transferring gas supplied to the transfer chamber to both the processing chambers and transfer chamber or to only the processing chambers, wherein the process comprises (b) a step of transferring the sample into the processing chamber with the transferring gas supplied to the processing chamber; (c) thereafter, generating plasma from the transferring gas supplied to the processing chamber while maintaining the supply of transferring gas to the processing chamber; (d) a step of switching the gas supplied to the processing chamber from transferring gas to processing gas while maintaining plasma by supplying processing gas continuously to the processing chamber; and (e) a step of subjecting the sample to plasma processing.
A plasma processing method carried out in a plasma processing apparatus having a processing chamber for subjecting a sample to plasma processing, a transfer chamber connected to the processing chamber for transferring the sample, and a supply system for feeding gas, which is a same gas as a transferring gas supplied to the transferring chamber, to both the processing chamber and the transfer chamber, or to only the processing chamber when transferring the sample from the transfer chamber to the processing chamber;
A plasma processing method carried out in a plasma processing apparatus having a processing chamber for subjecting a sample to plasma processing, a transfer chamber connected to the processing chamber for transferring the sample, and a supply system for feeding gas, which is a same gas as a transferring gas supplied to the transferring chamber, to both the processing chamber and the transfer chamber, or to only the processing chamber when transferring the sample from the transfer chamber to the processing chamber;
A plasma processing method carried out in a plasma processing apparatus having a processing chamber for subjecting a sample to plasma processing, a transfer chamber connected to the processing chamber for transferring the sample, and a supply system for feeding gas which is a same gas as a transferring gas supplied to the transferring chamber, to both the processing chamber and the transfer chamber, or to only the processing chamber when transferring the sample from the transfer chamber to the processing chamber;
Dependencies are inferred from the claim text.