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US 2009/0213888 A1Published application
Semiconductor laser device and manufacturing method therefor
AssigneeMitsubishi Electric Corporation
InventorTetsuya Yagi
Life of this patent
Estimating the term…
Abstract
A semiconductor laser device includes a semiconductor laser, a dangling bond terminating film a cleaved surface of the semiconductor laser and composed of a lithium film or a beryllium film, and a coating film on the dangling bond terminating film.
Claims7
A semiconductor laser device comprising:
- a semiconductor laser;
- a dangling bond terminating film on at least one cleaved surface of said semiconductor laser and composed of a lithium film or a beryllium film;
- and
- a coating film on said dangling bond terminating film.
1 more element
A semiconductor laser device comprising:
- a semiconductor laser having a cleaved surface terminated with hydrogen;
- and
- a coating film on said cleaved surface.
A method for manufacturing a semiconductor laser device, comprising:
- cleaving a semiconductor laser wafer into a semiconductor laser having an exposed cleaved surface;
- forming a dangling bond terminating film on said exposed cleaved surface by sputtering, said dangling bond terminating film being a lithium film or a beryllium film;
- and
- forming a coating film on said dangling bond terminating film.
1 more element
A method for manufacturing a semiconductor laser device, comprising:
- cleaving a semiconductor laser wafer into a semiconductor laser having an exposed cleaved surface;
- hydrogen terminating said exposed cleaved surface by hydrogen plasma processing in a sputtering system;
- and
- forming a coating film on said hydrogen-terminated cleaved surface after said hydrogen terminating.
1 more element
Dependencies are inferred from the claim text.