Semiconductor laser and method of manuracture
OwnerJohn A. Patchellinventor
Life of this patent
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Abstract
The present application relates to a semiconductor laser, in particular such a laser which operates with substantially single longitudinal mode emission. The laser comprising a laser cavity, the laser further comprising a slot having an interface, characterised in that the slot is substantially filled with a reflective material having a large imaginary index relative to the laser cavity material. The interfaces of the slot may be inclined or may have a step for introducing a quarter wave phase shift.
Claims21
-19. (canceled)
A laser comprising a laser cavity, the laser further comprising a slot having an interface, characterised in that the slot is substantially filled with a reflective material having a large imaginary index relative to the laser cavity material.
A laser comprising a laser cavity, the laser further comprising at least one slot, the slot providing at least one abrupt interface, characterised in that the abrupt interface comprises two sections spaced longitudinally from one another along the laser cavity, so that substantially a quarter wavelength step is provided at the interface.
A method of manufacturing a laser comprising the steps of:
- providing a laser cavity;
- defining a slot having an interface at a place along said laser cavity;
- and
- substantially filling said slot with a reflective material having a large imaginary index relative to the laser cavity material.
Dependencies are inferred from the claim text.