Semiconductor memory device enhancing reliability in data reading
AssigneeRenesas Technology Corp.
InventorsTakashi KUBO, Takashi ITOH, Yasuhiro KASHIWAZAKI, Taku OGURA, Kiyohiro FURUTANI
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Abstract
An internal voltage generating circuit generates and supplies a boosted voltage higher than an internal power supply voltage, as an operating power supply voltage, to a sense amplifier in a read circuit for reading data of a memory cell. A bit line precharge current supplied via an internal data line is produced from the internal power supply voltage. It is possible to provide a nonvolatile semiconductor memory device, which can perform a precise sense operation and an accurate reading of data even under a low power supply voltage condition.
Claims4
1-10. (canceled)
A semiconductor memory device comprising:
- memory cells arranged at least in one row, each memory cell including a transistor having a gate and exhibiting gate-voltage to drive-current characteristics having temperature dependency, and said each storing data according to a threshold voltage of the transistor;
- voltage generating circuitry for generating a word line drive voltage having temperature dependency for compensating for the temperature dependency of the gate-voltage to drive-current characteristics of the transistors of said memory cells, said word line drive voltage having the temperature dependency changeable both in a positive direction and in a negative direction according to a control signal;
- at least one word line arranged corresponding to the memory cells arranged in the row, and connected to the gates of the memory cell transistors;
- and
- word line select circuitry for transmitting the word line drive voltage generated by said voltage generating circuit to said one word line when said one word line is selected.
Dependencies are inferred from the claim text.