Semiconductor processing device and IC card

An IC card being enclosed with a synthetic resin comprising:

• a first non-volatile memory for erasing stored information on a first data length unit;
• a second non-volatile memory for erasing stored information on a second data length unit;
• a central processing unit;
• and
• a terminal for inputting/outputting data from/to an outside,
• wherein encrypted data are input/output from/to the outside,
• the first non-volatile memory is used for storing an encryption key to be utilized for encrypting the data,
• the second non-volatile memory is used for storing a program to be processed by the central processing unit,
• each of the first non-volatile memory and the second non-volatile memory has a plurality of non-volatile memory cells,
• each of the non-volatile memory cells has a channel region between a first diffusion layer region and a second diffusion layer region which are formed on the substrate, has an electric charge storage layer on the channel region through a first insulating film, has a first gate terminal on the electric charge storage layer through a second insulating film, and has a second gate terminal through the first gate terminal and a third insulating film on a second channel region which is adjacent to a first channel region provided under the electric charge storage layer,
• a hot electron generated in the channel region provided under the third insulating film is injected into the electric charge storage layer or an electric charge is extracted from the electric charge storage layer, thereby carrying out an operation for changing a threshold voltage of the memory cell.

An IC card being enclosed with a synthetic resin comprising:

• a first non-volatile memory for erasing stored information on a first data length unit;
• a second non-volatile memory for erasing stored information on a second data length unit;
• a central processing unit;
• and
• an antenna for inputting/outputting data from/to an outside,
• wherein encrypted data are input/output from/to the outside,
• the first non-volatile memory is used for storing an encryption key to be utilized for encrypting the data,
• the second non-volatile memory is used for storing a program to be processed by the central processing unit,
• each of the first non-volatile memory and the second non-volatile memory has a plurality of non-volatile memory cells,
• each of the non-volatile memory cells has a channel region between a first diffusion layer region and a second diffusion layer region which are formed on the substrate, has an electric charge storage layer on the channel region through a first insulating film, has a first gate terminal on the electric charge storage layer through a second insulating film, and has a second gate terminal through the first gate terminal and a third insulating film on a second channel region which is adjacent to a first channel region provided under the electric charge storage layer,
• a hot electron generated in the channel region provided under the third insulating film is injected into the electric charge storage layer or an electric charge is extracted from the electric charge storage layer, thereby carrying out an operation for changing a threshold voltage of the memory cell.

A semiconductor processing device being capable of inputting/outputting encrypted data to/from an outside comprising:

• a first non-volatile memory for erasing stored information on a first data length unit;
• a second non-volatile memory for erasing stored information on a second data length unit;
• and
• a central processing unit,
• wherein each of the first non-volatile memory and the second non-volatile memory has a plurality of memory cells,
• each of the memory cells has a source region, a drain region and a channel region between the source region and the drain region, has a data storage insulating layer and a first gate on the channel region through an insulating layer, and has a second gate on the data storage insulating layer,
• each of the first non-volatile memory and the second non-volatile memory has a plurality of first word lines, corresponding memory cells are connected to the first word lines when the stored information is erased from the first non-volatile memory, corresponding memory cells are connected to the first word lines when the stored information is erased from the second non-volatile memory, and the number of the memory cells to be connected to the first word lines in the first non-volatile memory is smaller than that of the memory cells to be connected to the first word lines in the second non-volatile memory.

A semiconductor processing device comprising:

• a first non-volatile memory for erasing stored information on a first data length unit;
• a second non-volatile memory for erasing stored information on a second data length unit;
• a central processing unit;
• and
• an external interface circuit,
• wherein the first non-volatile memory is used for storing data,
• the second non-volatile memory is used for storing a program to be processed by the central processing unit,
• each of the first non-volatile memory and the second non-volatile memory has a plurality of non-volatile memory cells,
• each of the non-volatile memory cells has a channel region between a first diffusion layer region and a second diffusion layer region which are formed on the substrate, has an electric charge storage layer on the channel region through a first insulating film, has a first gate terminal on the electric charge storage layer through a second insulating film, and has a second gate terminal through the first gate terminal and a third insulating film on a second channel region which is adjacent to a first channel region provided under the electric charge storage layer,
• a hot electron generated in the channel region provided under the third insulating film is injected into the electric charge storage layer or an electric charge is extracted from the electric charge storage layer, thereby carrying out an operation for changing a threshold voltage of the memory cell,
• the first data length is smaller than the second data length.

An IC card being enclosed with a synthetic resin comprising:

• a first non-volatile memory for erasing stored information on a first data length unit;
• a second non-volatile memory for erasing stored information on a second data length unit;
• a central processing unit;
• and
• a terminal for inputting/outputting data from/to an outside,
• wherein the first non-volatile memory is used for storing data,
• the second non-volatile memory is used for storing a program to be processed by the central processing unit,
• each of the first non-volatile memory and the second non-volatile memory has a plurality of non-volatile memory cells,
• each of the non-volatile memory cells has a channel region between a first diffusion layer region and a second diffusion layer region which are formed on the substrate, has an electric charge storage layer on the channel region through a first insulating film, has a first gate terminal on the electric charge storage layer through a second insulating film, and has a second gate terminal through the first gate terminal and a third insulating film on a second channel region which is adjacent to a first channel region provided under the electric charge storage layer,
• a hot electron generated in the channel region provided under the third insulating film is injected into the electric charge storage layer or an electric charge is extracted from the electric charge storage layer, thereby carrying out an operation for changing a threshold voltage of the memory cell,
• the first data length is smaller than the second data length.

An IC card comprising a first non-volatile memory for erasing stored information on a first data length unit, a second non-volatile memory for erasing stored information on a second data length unit, a central processing unit, and an antenna for inputting/outputting data from/to an outside which are enclosed with a synthetic resin,

• wherein the first non-volatile memory is used for storing data,
• the second non-volatile memory is used for storing a program to be processed by the central processing unit,
• each of the first non-volatile memory and the second non-volatile memory has a plurality of non-volatile memory cells,
• each of the non-volatile memory cells has a channel region between a first diffusion layer region and a second diffusion layer region which are formed on the substrate, has an electric charge storage layer on the channel region through a first insulating film, has a first gate terminal on the electric charge storage layer through a second insulating film, and has a second gate terminal through the first gate terminal and a third insulating film on a second channel region which is adjacent to a first channel region provided under the electric charge storage layer,
• a hot electron generated in the channel region provided under the third insulating film is injected into the electric charge storage layer or an electric charge is extracted from the electric charge storage layer, thereby carrying out an operation for changing a threshold voltage of the memory cell,
• the first data length is smaller than the second data length.