Integrated Circuit Comprising a Thyristor and Method of Controlling a Memory Cell Comprising a Thyristor
AssigneeQimonda AG
InventorStefan Slesazeck
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AssigneeQimonda AG
InventorStefan Slesazeck
Estimating the term…
An integrated circuit is provided comprising an array of memory cells connected by word and bit lines, respectively, wherein each memory cell comprises a thyristor structure, an anode terminal that connects the thyristor structure with a respective bit line, a gate terminal that connects the thyristor structure with a respective word line, and a cathode terminal. The integrated circuit further comprises a drive/sensing circuitry configured to apply a first sequence of voltage signals at the anode terminal and the gate terminal, wherein the voltage signals are defined with respect to the cathode terminal. The first sequence comprises a first voltage signal at the anode terminal, a second voltage signal at the gate terminal, and thereafter a combination of a third voltage signal at the anode terminal and a fourth voltage signal at the gate terminal, wherein the third voltage signal is lower than the first voltage signal and lower than the fourth voltage signal.
An integrated circuit comprising an array of memory cells connected by word lines and bit lines, each memory cell comprising:
A method for controlling a memory cell with a thyristor structure including a body, a first terminal connected to a respective bit line, and a second terminal connected to a respective word line, the method comprising:
A method for controlling a memory cell, the memory cell comprising a thyristor structure with a body, a gate terminal, a cathode terminal and an anode terminal, the method comprising:
A method for controlling a memory cell, the memory cell including a thyristor structure with a gate terminal, a cathode terminal and an anode terminal, the method comprising:
An integrated circuit comprising an array of memory cells each memory cell comprising:
Dependencies are inferred from the claim text.