Integrated Circuit and Method of Improved Determining a Memory State of a Memory Cell
OwnerMichael Angerbauer, Heinz Hoenigschmid +1inventors
InventorsMichael Angerbauer, Heinz Hoenigschmid, Corvin Liaw
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Abstract
According to one embodiment, a method of determining a memory state of a resistivity changing memory cell is provided. A first electrode of the resistivity changing memory cell is set to a first potential. The method further includes setting the second electrode to a second potential being different from the first potential, thereby generating a memory state sensing current flowing through the resistivity changing memory cell; controlling the strength of the second potential in dependence on the strength of the memory state sensing current such that the strength of the memory state sensing current is kept constant.
Claims25
A method of determining a memory state of a memory cell, the method comprising:
- setting a first electrode of the memory cell to a first potential;
- setting a second electrode of the memory cell to a second potential that is different from the first potential, thereby generating a memory state sensing current flowing through the memory cell;
- and
- controlling the strength of the second potential in dependence on the strength of the memory state sensing current such that the strength of the memory state sensing current is kept substantially constant.
An integrated circuit comprising at least one memory device, the integrated circuit comprising:
- a memory cell;
- and
- a setting circuit configured to:
- set a first electrode of the memory cell to a first potential;
- set a second electrode of the memory cell to a second potential that is different from the first potential, in order to generate a memory state sensing current that flows through the memory cell;
- and
- control the strength of the second potential in dependence on the strength of the memory state sensing current such that the strength of the memory state sensing current is kept constant.
A memory device, comprising:
- a memory cell;
- setting means for setting a first electrode of the memory cell to a first potential, for setting a second electrode of the memory cell to a second potential that is different from the first potential, thereby generating a memory state sensing current which flows through the memory means, and for controlling the strength of the second potential in dependence on the strength of the memory state sensing current such that the strength of the memory state sensing current is kept substantially constant.
A memory module comprising at least one memory device, the memory module comprising:
- a memory cell;
- a setting circuit being configured to set a first electrode of the memory cell to a first potential;
- set a second electrode of the memory cell to a second potential being different from the first potential, in order to generate a memory state sensing current which flows through the memory cell;
- and
- control the strength of the second potential in dependence on the strength of the memory state sensing current such that the strength of the memory state sensing current is kept constant.
Dependencies are inferred from the claim text.