Integrated Circuit, Memory Cell Arrangement, Memory Cell, Memory Module, Method of Operating an Integrated Circuit, and Method of Manufacturing a Memory Cell

A memory cell arrangement, comprising a plurality of magneto-resistive memory cells, each magneto-resistive memory cell comprising:

• a first ferromagnetic layer;
• a second ferromagnetic layer;
• and
• a nonmagnetic layer being disposed between the first ferromagnetic layer and the second ferromagnetic layer;
• the arrangement also comprising a programming circuit configured to route programming currents through the magneto-resistive memory cells, wherein the programming current routed through the magneto-resistive memory cell programs magnetizations of the first ferromagnetic layer and of the second ferromagnetic layer of the magneto-resistive memory cell by spin induced switching effects.

A memory cell, comprising:

• a first ferromagnetic layer;
• a second ferromagnetic layer;
• and
• a nonmagnetic layer being disposed between the first ferromagnetic layer and the second ferromagnetic layer,
• wherein the memory cell is connectable to a programming circuit configured to route a programming current through a magneto-resistive memory cell;
• and
• wherein the first ferromagnetic layer, the second ferromagnetic layer and the nonmagnetic layer are arranged such that magnetizations of the first ferromagnetic layer and of the second ferromagnetic layer are programmable by spin induced switching effects caused by the programming current.

A method of manufacturing a magneto-resistive memory cell, the method comprising:

• forming a first ferromagnetic layer;
• forming a second ferromagnetic layer;
• and
• forming a nonmagnetic layer being disposed between the first ferromagnetic layer and the second ferromagnetic layer,
• wherein the formation of the first ferromagnetic layer, the second ferromagnetic layer, and the nonmagnetic layer is carried out such that magnetizations of the first ferromagnetic layer and of the second ferromagnetic layer are programmable by spin induced switching effects generated by a programming current which is routed through the magneto-resistive memory cell.