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AssigneeGrandis, Inc.
InventorsEugene Youjun Chen, Yiming Huai
Estimating the term…
A method and system for providing and using a magnetic memory is described. The method and system include providing a plurality of magnetic storage cells. Each magnetic storage cell includes a magnetic element and a selection device coupled with the magnetic element. The magnetic element is programmed by write currents driven through the magnetic element in a first or second direction. In one aspect, the method and system include providing a voltage supply and a voltage pump coupled with the magnetic storage cells and the voltage supply. The voltage supply provides a supply voltage. The voltage pump provides to the selection device a bias voltage having a magnitude greater than the supply voltage. Another aspect includes providing a silicon on oxide transistor as the selection device. Another aspect includes providing to the body of the transistor a body bias voltage that is a first voltage when the transistor is off and a second voltage when the transistor is on.
A magnetic memory comprising:
A resistive memory comprising:
A method for utilizing a magnetic memory including a plurality of magnetic storage cells and a voltage supply, each of the plurality of magnetic storage cells including a magnetic element and a selection device coupled with the magnetic element, the magnetic element being programmed to a first state by a first write current driven through the magnetic element in a first direction and to a second state by a second write current driven through the magnetic element in a second direction, the voltage supply providing a supply voltage, the method comprising:
Dependencies are inferred from the claim text.